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IRF340 数据表(PDF) 2 Page - International Rectifier

部件名 IRF340
功能描述  TRANSISTORS N-CHANNEL(Vdss=400V, Rds(on)0.55ohm, Id=10A)
PDF  7 Pages
Scroll/Zoom Zoom In 100%  Zoom Out
制造商  IRF [International Rectifier]
网页  http://www.irf.com
标志 IRF - International Rectifier

IRF340 数据表(HTML) 2 Page - International Rectifier

  IRF340 Datasheet HTML 1Page - International Rectifier IRF340 Datasheet HTML 2Page - International Rectifier IRF340 Datasheet HTML 3Page - International Rectifier IRF340 Datasheet HTML 4Page - International Rectifier IRF340 Datasheet HTML 5Page - International Rectifier IRF340 Datasheet HTML 6Page - International Rectifier IRF340 Datasheet HTML 7Page - International Rectifier  
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IRF340
2
www.irf.com
Thermal Resistance
Parameter
Min Typ Max
Units
Test Conditions
RthJC
Junction to Case
1.0
RthJA
Junction to Ambient
30
Typical socket mount
°C/W
Source-Drain Diode Ratings and Characteristics
Parameter
Min Typ
Max Units
Test Conditions
IS
Continuous Source Current (Body Diode)
1 0
ISM
Pulse Source Current (Body Diode) ➀
——
4 0
VSD
Diode Forward Voltage
1.5
V
Tj = 25°C, IS = 10A, VGS = 0V ➃
trr
Reverse Recovery Time
600
nS
Tj = 25°C, IF = 10A, di/dt ≤ 100A/µs
QRR
Reverse Recovery Charge
5.6
µC
VDD ≤ 50V ➃
t on
Forward Turn-On Time
Intrinsic turn-on time is negligible. Turn-on speed is substantially controlled by LS + LD.
A
For footnotes refer to the last page
Electrical Characteristics @ Tj = 25°C (Unless Otherwise Specified)
Parameter
Min
Typ
Max Units
Test Conditions
BVDSS
Drain-to-Source Breakdown Voltage
4 00
V
VGS = 0V, ID = 1.0mA
∆BVDSS/∆TJ Temperature Coefficient of Breakdown
0.46
V/°C
Reference to 25°C, ID = 1.0mA
Voltage
RDS(on)
Static Drain-to-Source On-State
0.55
VGS = 10V, ID = 6.0A➃
Resistance
0.63
VGS = 10V, ID =10A ➃
VGS(th)
Gate Threshold Voltage
2.0
4.0
V
VDS = VGS, ID =250mA
gfs
Forward Transconductance
4.9
S ( )VDS > 15V, IDS = 6.0A ➃
IDSS
Zero Gate Voltage Drain Current
2 5
VDS=320V, VGS=0V
250
VDS = 320V
VGS = 0V, TJ = 125°C
IGSS
Gate-to-Source Leakage Forward
100
VGS = 20V
IGSS
Gate-to-Source Leakage Reverse
-100
VGS = -20V
Qg
Total Gate Charge
3 2
6 5
VGS = 10V, ID =10A
Qgs
Gate-to-Source Charge
2.2
1 0
nC
VDS = 200V
Qgd
Gate-to-Drain (‘Miller’) Charge
1 4
4 1
td(on)
Turn-On Delay Time
2 5
VDD =200V, ID =10A,
t r
Rise Time
9 2
RG =9.1Ω
td(off)
Turn-Off Delay Time
7 9
tf
Fall Time
5 8
LS + LD
Total Inductance
6.1
Ciss
Input Capacitance
1400
VGS = 0V, VDS = 25V
Coss
Output Capacitance
350
pF
f = 1.0MHz
Crss
Reverse Transfer Capacitance
230
nA
nH
ns
µA
Measured from drain lead (6mm/0.25in. from
package) to source lead (6mm/0.25in. from
package)



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