NP100P06PLG-E2-AYNote datasheet(7/9 Pages) RENESAS

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Data Sheet D18695EJ3V0DS

NP100P06PLG

DRAIN TO SOURCE ON-STATE RESISTANCE vs.

CHANNEL TEMPERATURE

CAPACITANCE vs. DRAIN TO SOURCE VOLTAGE

-75

-25

125

175

225

ID =

−50 A

Pulsed

−10 V

VGS =

−4.5 V

Tch - Channel Temperature -

°C

100

1000

10000

100000

-0.1

-1

-10

-100

VGS = 0 V

f = 1 MHz

Ciss

Coss

Crss

VDS - Drain to Source Voltage - V

SWITCHING CHARACTERISTICS

DYNAMIC INPUT/OUTPUT CHARACTERISTICS

100

1000

-0.1

-1

-10

-100

-1000

td(off)

td(on)

VDD =

−30 V

VGS =

−10 V

RG = 0

ID - Drain Current - A

-10

-20

-30

-40

-50

-60

100

150

200

250

300

350

-0

-2

-4

-6

-8

-10

-12

VDS

ID =

−100 A

VGS

VDD =

−48 V

−30 V

−12 V

QG - Gate Charge - nC

SOURCE TO DRAIN DIODE

FORWARD VOLTAGE

REVERSE RECOVERY TIME vs.

DIODE FORWARD CURRENT

-0.01

-0.1

-1

-10

-100

-1000

00.5

11.5

VGS =

−10 V

0 V

Pulsed

VF(S-D) - Source to Drain Voltage - V

100

1000

-0.1

-1

-10

-100

di/dt =

−100 A/μs

VGS = 0 V

IF - Diode Forward Current - A

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