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IRF7204 数据表(PDF) 2 Page - International Rectifier

部件名 IRF7204
功能描述  Power MOSFET(Vdss=-20V, Rds(on)=0.060ohm, Id=-5.3A)
PDF  9 Pages
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制造商  IRF [International Rectifier]
网页  http://www.irf.com
标志 IRF - International Rectifier

IRF7204 数据表(HTML) 2 Page - International Rectifier

  IRF7204 Datasheet HTML 1Page - International Rectifier IRF7204 Datasheet HTML 2Page - International Rectifier IRF7204 Datasheet HTML 3Page - International Rectifier IRF7204 Datasheet HTML 4Page - International Rectifier IRF7204 Datasheet HTML 5Page - International Rectifier IRF7204 Datasheet HTML 6Page - International Rectifier IRF7204 Datasheet HTML 7Page - International Rectifier IRF7204 Datasheet HTML 8Page - International Rectifier IRF7204 Datasheet HTML 9Page - International Rectifier  
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IRF7204
Parameter
Min. Typ. Max. Units
Conditions
V(BR)DSS
Drain-to-Source Breakdown Voltage
-20
–––
–––
V
VGS = 0V, ID = -250µA
∆V
(BR)DSS/∆TJ
Breakdown Voltage Temp. Coefficient
––– -0.022 –––
V/°C
Reference to 25°C, ID = -1mA
–––
–––
0.060
VGS = -10V, ID = -5.3A
ƒ
–––
–––
0.10
VGS = -4.5V, ID = -2.0A
ƒ
VGS(th)
Gate Threshold Voltage
-1.0
–––
-2.5
V
VDS = VGS, ID = -250µA
gfs
Forward Transconductance
–––
7.9
–––
S
VDS = -15V, ID = -5.3A
ƒ
–––
–––
-25
VDS = -16V, VGS = 0V
–––
–––
-250
VDS = -16V, VGS = 0V, TJ = 125 °C
Gate-to-Source Forward Leakage
–––
–––
-100
VGS = -12V
Gate-to-Source Reverse Leakage
–––
–––
100
VGS = 12V
Qg
Total Gate Charge
–––
25
–––
ID = -5.3A
Qgs
Gate-to-Source Charge
–––
5.0
–––
nC
VDS = -10V
Qgd
Gate-to-Drain ("Miller") Charge
–––
8.0
–––
VGS = -10V
ƒ
td(on)
Turn-On Delay Time
–––
14
30
VDD = -10V
tr
Rise Time
–––
26
60
ID = -1.0A
td(off)
Turn-Off Delay Time
–––
100
150
RG = 6.0
Ω
tf
Fall Time
–––
68
100
RD = 10Ω
ƒ
Between lead,6mm(0.25in.)
from package and center
of die contact
Ciss
Input Capacitance
–––
860
–––
VGS = 0V
Coss
Output Capacitance
–––
750
–––
pF
VDS = -10V
Crss
Reverse Transfer Capacitance
–––
230
–––
ƒ = 1.0MHz
Parameter
Min. Typ. Max. Units
Conditions
IS
Continuous Source Current
MOSFET symbol
(Body Diode)
showing the
ISM
Pulsed Source Current
integral reverse
(Body Diode)

p-n junction diode.
VSD
Diode Forward Voltage
–––
–––
-1.2
V
TJ = 25°C, IS = -1.25A, VGS = 0V
ƒ
trr
Reverse Recovery Time
–––
85
100
ns
TJ = 25°C, IF = -2.4A
Qrr
Reverse RecoveryCharge
–––
77
120
nC
di/dt = 100A/µs
ƒ
ton
Forward Turn-On Time
Source-Drain Ratings and Characteristics
Electrical Characteristics @ TJ = 25°C (unless otherwise specified)
Intrinsic turn-on time is negligible (turn-on is dominated by LS+LD)
–––
–––
-15
–––
–––
-2.5
A
IGSS
IDSS
Drain-to-Source Leakage Current
LS
Internal Source Inductance
–––
4.0
–––
LD
Internal Drain Inductance
–––
2.5
–––
nH
ns
nA
µA
Ω
RDS(ON)
Static Drain-to-Source On-Resistance
Notes:
 Repetitive rating; pulse width limited by
max. junction temperature.
‚ ISD ≤ -5.3A, di/dt ≤ 90A/µs, VDD ≤ V(BR)DSS,
TJ ≤ 150°C
ƒ Pulse width ≤ 300µs; duty cycle ≤ 2%.
„ Surface mounted on FR-4 board, t ≤ 10sec.
S
D
G
S
D
G



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