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IRF7413 数据表(PDF) 2 Page - International Rectifier

部件名 IRF7413
功能描述  Power MOSFET(Vdss=30V, Id=12A)
PDF  8 Pages
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制造商  IRF [International Rectifier]
网页  http://www.irf.com
标志 IRF - International Rectifier

IRF7413 数据表(HTML) 2 Page - International Rectifier

  IRF7413 Datasheet HTML 1Page - International Rectifier IRF7413 Datasheet HTML 2Page - International Rectifier IRF7413 Datasheet HTML 3Page - International Rectifier IRF7413 Datasheet HTML 4Page - International Rectifier IRF7413 Datasheet HTML 5Page - International Rectifier IRF7413 Datasheet HTML 6Page - International Rectifier IRF7413 Datasheet HTML 7Page - International Rectifier IRF7413 Datasheet HTML 8Page - International Rectifier  
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IRF7413
2
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Parameter
Min. Typ. Max. Units
Conditions
gfs
Forward Transconductance
16
–––
–––
SVDS = 10V, ID = 7.2A
Qg
Total Gate Charge
–––
44
66
ID = 7.2A
Qgs
Gate-to-Source Charge
–––
7.9
–––
nC
VDS = 24V
Qgd
Gate-to-Drain ("Miller") Charge
–––
9.2
–––
VGS = 10V,
td(on)
Turn-On Delay Time
–––
8.8
–––
VDD = 100V
tr
Rise Time
–––
8.0
–––
ID = 7.2A
td(off)
Turn-Off Delay Time
–––
35
–––
RG = 6.2Ω
tf
Fall Time
–––
14
–––
VGS = 10V
ƒ
Ciss
Input Capacitance
–––
1670 –––
VGS = 0V
Coss
Output Capacitance
–––
670
–––
VDS = 25V
Crss
Reverse Transfer Capacitance
–––
100
–––
pF
ƒ = 1.0MHz
Coss
Output Capacitance
–––
2290 –––
VGS = 0V, VDS = 1.0V, ƒ = 1.0MHz
Coss
Output Capacitance
–––
680
–––
VGS = 0V, VDS = 24V, ƒ = 1.0MHz
Coss eff.
Effective Output Capacitance
–––
1020 –––
VGS = 0V, VDS = 0V to 24V
…
Dynamic @ TJ = 25°C (unless otherwise specified)
ns
Parameter
Typ.
Max.
Units
EAS
Single Pulse Avalanche Energy
‚
–––
120
mJ
IAR
Avalanche Current

–––
7.2
A
Avalanche Characteristics
S
D
G
Parameter
Min. Typ. Max. Units
Conditions
IS
Continuous Source Current
MOSFET symbol
(Body Diode)
–––
–––
showing the
ISM
Pulsed Source Current
integral reverse
(Body Diode)

–––
–––
p-n junction diode.
VSD
Diode Forward Voltage
–––
–––
1.0
V
TJ = 25°C, IS = 7.2A, VGS = 0V
ƒ
trr
Reverse Recovery Time
–––
50
75
ns
TJ = 25°C, IF = 7.2A
Qrr
Reverse RecoveryCharge
–––
74
110
nC
di/dt = 100A/µs
ƒ
Diode Characteristics
3.1
96
A
Static @ TJ = 25°C (unless otherwise specified)
IGSS
IDSS
Drain-to-Source Leakage Current
RDS(on)
Static Drain-to-Source On-Resistance
m
Ω
Symbol
Parameter
Min. Typ. Max. Units
Conditions
V(BR)DSS
Drain-to-Source Breakdown Voltage
30
–––
–––
VVGS = 0V, ID = 250µA
∆V(BR)DSS/∆TJ Breakdown Voltage Temp. Coefficient
–––
0.03
–––
V/°C
Reference to 25°C, ID = 1mA
–––
–––
11
VGS = 10V, ID = 7.2A
ƒ
–––
–––
18
VGS = 4.5V, ID = 6.0A
VGS(th)
Gate Threshold Voltage
1.0
–––
–––
VVDS = VGS, ID = 250µA
–––
–––
1.0
µA
VDS = 24V, VGS = 0V
–––
–––
25
VDS = 24V, VGS = 0V, TJ = 125°C
Gate-to-Source Forward Leakage
–––
–––
100
VGS = 20V
Gate-to-Source Reverse Leakage
–––
–––
-100
nA
VGS = -20V



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