Elektronische Bauelemente

SCG3019

N-Channel Enhancement MOSFET

18-Dec-2013 Rev. B

Page 2 of 3

http://www.SeCoSGmbH.com/

Any changes of specification will not be informed individually.

CHARACTERISTICS

SYMBOL

MIN

TYP

MAX

UNIT

TEST CONDITIONS

Off Characteristics

Drain-Source Breakdown Voltage

30

-

-

V

Zero Gate Voltage Drain Current

-

-

1

μA

Gate-Source Leakage

-

-

±1

μA

Gate Threshold Voltage

0.8

-

1.5

V

-

-

8

Static Drain-Source On Resistance

-

-

13

Ω

Forward transfer admittance

gfs

20

-

-

mS

Dynamic Characteristics

Input Capacitance

-

13

-

Output Capacitance

-

9

-

Reverse Transfer Capacitance

-

4

-

pF

Switching Characteristics

Turn-On Delay Time

-

15

-

Rise Time

-

35

-

Turn-Off Delay Time

-

80

-

Fall Time

-

80

-

nS