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IRF7607 数据表(PDF) 1 Page - International Rectifier

部件名 IRF7607
功能描述  Power MOSFET(Vdss=20V, Rds(on)=0.030ohm)
PDF  8 Pages
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制造商  IRF [International Rectifier]
网页  http://www.irf.com
标志 IRF - International Rectifier

IRF7607 数据表(HTML) 1 Page - International Rectifier

  IRF7607 Datasheet HTML 1Page - International Rectifier IRF7607 Datasheet HTML 2Page - International Rectifier IRF7607 Datasheet HTML 3Page - International Rectifier IRF7607 Datasheet HTML 4Page - International Rectifier IRF7607 Datasheet HTML 5Page - International Rectifier IRF7607 Datasheet HTML 6Page - International Rectifier IRF7607 Datasheet HTML 7Page - International Rectifier IRF7607 Datasheet HTML 8Page - International Rectifier  
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1/19/00
HEXFET® Power MOSFET
Parameter
Max.
Units
RθJA
Maximum Junction-to-Ambient
ƒ
70
°C/W
Thermal Resistance
VDSS = 20V
RDS(on) = 0.030Ω
Description
www.irf.com
1
PD - 93845
IRF7607
q
Trench Technology
q
Ultra Low On-Resistance
q
N-Channel MOSFET
q
Very Small SOIC Package
q
Low Profile (<1.1mm)
q
Available in Tape & Reel
New trench HEXFET® power MOSFETs from International
Rectifier utilize advanced processing techniques to achieve
extremely low on-resistance per silicon area. This benefit,
combined with the ruggedized device design that HEXFET
power MOSFETs are well known for, provides the designer
with an extremely efficient and reliable device for use in a wide
variety of applications.
The new Micro8
™ package has half the footprint area of the
standard SO-8. This makes the Micro8 an ideal package for
applications where printed circuit board space is at a premium.
The low profile (<1.1mm) of the Micro8 will allow it to fit easily
into extremely thin application environments such as portable
electronics and PCMCIA cards.
Micro8
™
Parameter
Max.
Units
VDS
Drain- Source Voltage
20
V
ID @ TA = 25°C
Continuous Drain Current, VGS @ 4.5V
6.5
ID @ TA= 70°C
Continuous Drain Current, VGS @ 4.5V
5.2
A
IDM
Pulsed Drain Current

50
PD @TA = 25°C
Power Dissipation
1.8
PD @TA = 70°C
Power Dissipation
1.2
Linear Derating Factor
0.014
W/°C
VGS
Gate-to-Source Voltage
± 12
V
TJ, TSTG
Junction and Storage Temperature Range
-55 to + 150
°C
Absolute Maximum Ratings
W
PROVISIONAL
T op V iew
8
1
2
3
4
5
6
7
D
D
D
D
G
S
A
S
S
A


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