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数据搜索系统，热门电子元器件搜索 |
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IRF7705 数据表(PDF) 2 Page - International Rectifier |
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IRF7705 数据表(HTML) 2 Page - International Rectifier |
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2 / 8 page  IRF7705 2 www.irf.com Repetitive rating; pulse width limited by max. junction temperature. Notes: Pulse width ≤ 400µs; duty cycle ≤ 2%. Parameter Min. Typ. Max. Units Conditions IS Continuous Source Current MOSFET symbol (Body Diode) showing the ISM Pulsed Source Current integral reverse (Body Diode) p-n junction diode. VSD Diode Forward Voltage ––– ––– -1.2 V TJ = 25°C, IS = -1.5A, VGS = 0V trr Reverse Recovery Time ––– 36 54 ns TJ = 25°C, IF = -1.5A Qrr Reverse RecoveryCharge ––– 34 50 nC di/dt = 100A/µs Source-Drain Ratings and Characteristics ––– ––– ––– ––– -30 -1.5 A When mounted on 1 inch square copper board, t<10 sec Parameter Min. Typ. Max. Units Conditions V(BR)DSS Drain-to-Source Breakdown Voltage -30 ––– ––– VVGS = 0V, ID = -250µA ∆V(BR)DSS/∆TJ Breakdown Voltage Temp. Coefficient ––– 0.015 ––– V/°C Reference to 25°C, ID = -1mA ––– ––– 18 VGS = -10V, ID = -8.0A ––– ––– 30 VGS = -4.5V, ID = -6.0A VGS(th) Gate Threshold Voltage -1.0 ––– -2.5 V VDS = VGS, ID = -250µA gfs Forward Transconductance 13 ––– ––– SVDS = -10V, ID = -8.0A ––– ––– -15 VDS = -24V, VGS = 0V ––– ––– -25 VDS = -24V, VGS = 0V, TJ = 70°C Gate-to-Source Forward Leakage ––– ––– -100 VGS = -20V Gate-to-Source Reverse Leakage ––– ––– 100 VGS = 20V Qg Total Gate Charge ––– 58 88 ID = -8.0A Qgs Gate-to-Source Charge ––– 10 ––– nC VDS = -15V Qgd Gate-to-Drain ("Miller") Charge ––– 9.0 ––– VGS = -10V td(on) Turn-On Delay Time ––– 18 27 VDD = -15V, VGS = -10V tr Rise Time ––– 35 53 ID = -1.0A td(off) Turn-Off Delay Time ––– 270 405 RD = 15Ω tf Fall Time ––– 128 190 RG = 6.0Ω Ciss Input Capacitance ––– 2774 ––– VGS = 0V Coss Output Capacitance ––– 418 ––– pF VDS = -25V Crss Reverse Transfer Capacitance ––– 270 ––– ƒ = 1.0MHz Electrical Characteristics @ TJ = 25°C (unless otherwise specified) IGSS µA m Ω RDS(on) Static Drain-to-Source On-Resistance IDSS Drain-to-Source Leakage Current nA ns S D G |
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