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IRF9956 数据表(PDF) 2 Page - International Rectifier |
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IRF9956 数据表(HTML) 2 Page - International Rectifier |
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2 / 7 page  IRF9956 Parameter Min. Typ. Max. Units Conditions IS Continuous Source Current MOSFET symbol (Body Diode) showing the ISM Pulsed Source Current integral reverse (Body Diode) p-n junction diode. VSD Diode Forward Voltage ––– 0.82 1.2 V TJ = 25°C, IS = 1.25A, VGS = 0V trr Reverse Recovery Time ––– 27 53 ns TJ = 25°C, IF = 1.25A Qrr Reverse RecoveryCharge ––– 28 57 nC di/dt = 100A/µs Source-Drain Ratings and Characteristics ––– ––– ––– ––– 16 1.7 A S D G
Surface mounted on FR-4 board, t ≤ 10sec. Repetitive rating; pulse width limited by max. junction temperature. ( See fig. 11 ) ISD ≤ 2.0A, di/dt ≤ 100A/µs, VDD ≤ V(BR)DSS, TJ ≤ 150°C Notes: Starting TJ = 25°C, L = 22mH RG = 25Ω, IAS = 2.0A. Pulse width ≤ 300µs; duty cycle ≤ 2%. Parameter Min. Typ. Max. Units Conditions V(BR)DSS Drain-to-Source Breakdown Voltage 30 ––– ––– V VGS = 0V, ID = 250µA ∆V(BR)DSS/∆TJ Breakdown Voltage Temp. Coefficient ––– 0.015 ––– V/°C Reference to 25°C, ID = 1mA ––– 0.06 0.10 VGS = 10V, ID = 2.2A ––– 0.09 0.20 VGS = 4.5V, ID = 1.0A VGS(th) Gate Threshold Voltage 1.0 ––– ––– V VDS = VGS, ID = 250µA gfs Forward Transconductance ––– 12 ––– S VDS = 15V, ID = 3.5A ––– ––– 2.0 VDS = 24V, VGS = 0V ––– ––– 25 VDS = 24V, VGS = 0V, TJ = 125°C Gate-to-Source Forward Leakage ––– ––– 100 VGS = 24V Gate-to-Source Reverse Leakage ––– ––– -100 VGS = -24V Qg Total Gate Charge ––– 6.9 14 ID = 1.8A Qgs Gate-to-Source Charge ––– 1.0 2.0 nC VDS = 10V Qgd Gate-to-Drain ("Miller") Charge ––– 1.8 3.5 VGS = 10V, See Fig. 10 td(on) Turn-On Delay Time ––– 6.2 12 VDD = 10V tr Rise Time ––– 8.8 18 ID = 1.0A td(off) Turn-Off Delay Time ––– 13 26 RG = 6.0 Ω tf Fall Time ––– 3.0 6.0 RD = 10 Ω Ciss Input Capacitance ––– 190 ––– VGS = 0V Coss Output Capacitance ––– 120 ––– pF VDS = 15V Crss Reverse Transfer Capacitance ––– 61 ––– ƒ = 1.0MHz, See Fig. 9 Electrical Characteristics @ TJ = 25°C (unless otherwise specified) IGSS µA Ω RDS(on) Static Drain-to-Source On-Resistance IDSS Drain-to-Source Leakage Current nA ns |
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