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IRFBA22N50 数据表(PDF) 1 Page - International Rectifier

部件名 IRFBA22N50
功能描述  Power MOSFET(Vdss=500V, Rds(on)max=0.23ohm, Id=24A)
PDF  8 Pages
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制造商  IRF [International Rectifier]
网页  http://www.irf.com
标志 IRF - International Rectifier

IRFBA22N50 数据表(HTML) 1 Page - International Rectifier

  IRFBA22N50 Datasheet HTML 1Page - International Rectifier IRFBA22N50 Datasheet HTML 2Page - International Rectifier IRFBA22N50 Datasheet HTML 3Page - International Rectifier IRFBA22N50 Datasheet HTML 4Page - International Rectifier IRFBA22N50 Datasheet HTML 5Page - International Rectifier IRFBA22N50 Datasheet HTML 6Page - International Rectifier IRFBA22N50 Datasheet HTML 7Page - International Rectifier IRFBA22N50 Datasheet HTML 8Page - International Rectifier  
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IRFBA22N50A
12/12/00
www.irf.com
1
SMPS MOSFET
HEXFET® Power MOSFET
l Switch Mode Power Supply ( SMPS )
l Uninterruptible Power Supply
l High Speed Power Switching
Benefits
Applications
l Low Gate Charge Qg results in Simple
Drive Requirement
l Improved Gate, Avalanche and Dynamic
dv/dt Ruggedness
l Fully Characterized Capacitance and
Avalanche Voltage and Current
l Effective Coss Specified (See AN1001)
VDSS
RDS(on) max
ID
500V
0.23
Ω
24A
Applicable Off Line SMPS Topologies:
l Full Bridge Converters
l Power Factor Correction Boost
Notes
 through … are on page 8
Parameter
Max.
Units
ID @ TC = 25°C
Continuous Drain Current, VGS @ 10V
24
ID @ TC = 100°C
Continuous Drain Current, VGS @ 10V
15
A
IDM
Pulsed Drain Current

96
PD @TC = 25°C
Power Dissipation
340
W
Linear Derating Factor
2.7
W/°C
VGS
Gate-to-Source Voltage
± 30
V
dv/dt
Peak Diode Recovery dv/dt
ƒ
3.4
V/ns
TJ
Operating Junction and
-55 to + 150
TSTG
Storage Temperature Range
Soldering Temperature, for 10 seconds
300 (1.6mm from case )
°C
Recommended clip force
20
N
Absolute Maximum Ratings
Super-220™
(TO-273AA)
PD-91866B


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