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IRFBC30AS 数据表(PDF) 2 Page - International Rectifier |
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IRFBC30AS 数据表(HTML) 2 Page - International Rectifier |
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2 / 10 page  IRFBC30AS/L 2 www.irf.com Parameter Min. Typ. Max. Units Conditions gfs Forward Transconductance 2.1 ––– ––– S VDS = 50V, ID = 2.2A Qg Total Gate Charge ––– ––– 23 ID = 3.6A Qgs Gate-to-Source Charge ––– ––– 5.4 nC VDS = 480V Qgd Gate-to-Drain ("Miller") Charge ––– ––– 11 VGS = 10V, See Fig. 6 and 13 td(on) Turn-On Delay Time ––– 9.8 ––– VDD = 300V tr Rise Time ––– 13 ––– ID = 3.6A td(off) Turn-Off Delay Time ––– 19 ––– RG = 12Ω tf Fall Time ––– 12 ––– RD = 82Ω,See Fig. 10 Ciss Input Capacitance ––– 510 ––– VGS = 0V Coss Output Capacitance ––– 70 ––– VDS = 25V Crss Reverse Transfer Capacitance ––– 3.5 ––– pF ƒ = 1.0MHz, See Fig. 5 Coss Output Capacitance ––– 730 ––– VGS = 0V, VDS = 1.0V, ƒ = 1.0MHz Coss Output Capacitance ––– 19 ––– VGS = 0V, VDS = 480V, ƒ = 1.0MHz Coss eff. Effective Output Capacitance ––– 31 ––– VGS = 0V, VDS = 0V to 480V Dynamic @ TJ = 25°C (unless otherwise specified) ns Parameter Typ. Max. Units EAS Single Pulse Avalanche Energy ––– 290 mJ IAR Avalanche Current ––– 3.6 A EAR Repetitive Avalanche Energy ––– 7.4 mJ Avalanche Characteristics S D G Parameter Min. Typ. Max. Units Conditions IS Continuous Source Current MOSFET symbol (Body Diode) ––– ––– showing the ISM Pulsed Source Current integral reverse (Body Diode) ––– ––– p-n junction diode. VSD Diode Forward Voltage ––– ––– 1.6 V TJ = 25°C, IS = 3.6A, VGS = 0V trr Reverse Recovery Time ––– 400 600 ns TJ = 25°C, IF = 3.6A Qrr Reverse RecoveryCharge ––– 1.1 1.7 µC di/dt = 100A/µs ton Forward Turn-On Time Intrinsic turn-on time is negligible (turn-on is dominated by LS+LD) Diode Characteristics 3.6 14 A Parameter Min. Typ. Max. Units Conditions V(BR)DSS Drain-to-Source Breakdown Voltage 600 ––– ––– V VGS = 0V, ID = 250µA ∆V(BR)DSS/∆TJ Breakdown Voltage Temp. Coefficient ––– 0.67 ––– V/°C Reference to 25°C, ID = 1mA RDS(on) Static Drain-to-Source On-Resistance ––– ––– 2.2 Ω VGS = 10V, ID = 2.2A VGS(th) Gate Threshold Voltage 2.0 ––– 4.5 V VDS = VGS, ID = 250µA ––– ––– 25 µA VDS = 600V, VGS = 0V ––– ––– 250 VDS = 480V, VGS = 0V, TJ = 125°C Gate-to-Source Forward Leakage ––– ––– 100 VGS = 30V Gate-to-Source Reverse Leakage ––– ––– -100 nA VGS = -30V Static @ TJ = 25°C (unless otherwise specified) IGSS IDSS Drain-to-Source Leakage Current Parameter Typ. Max. Units RθJC Junction-to-Case ––– 1.7 °C/W RθJA Junction-to-Ambient ( PCB Mounted, steady-state)* ––– 40 Thermal Resistance |
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