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SESD03 数据表(PDF) 2 Page - SeCoS Halbleitertechnologie GmbH |
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SESD03 数据表(HTML) 2 Page - SeCoS Halbleitertechnologie GmbH |
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2 / 2 page ![]() ELECTRICAL CHARACTERISTICS (T= 25 C unless otherwise noted, VF = 0.9V Max. @ IF=10mA for all types) o TYPE NUMBER SYMBOL Min. Typ. Max. UNIT TEST CONDITIONS Reverse Stand-Off Voltage VRWM - - 3.3 V W Reverse Leakage Current IR - - 2.5 µA VRWM = V 10.4 Peak Pulse Current IPP - A Reverse Breakdown Voltage VBR 5.0 IT = 1mA, TAMBIENT = 25 C - - V o Junction Cap Peak Power Dissipation acitance C PPK - - - 1.0 mA Test Current IT - V IPP = 10.4 A (surge charge waveform per Figure 2.) (surge charge waveform per Figure 2.) (surge charge waveform per Figure 2.) 11.9 - - Clamping Voltage VC - 80 - - 113 pF 3.3 ELECTRICAL CHARACTERISTIC CURVES http://www.SeCoSGmbH.com/ Any changing of specification will not be informed individual Page 2 of 2 24-Aug-2007 Rev. A Elektronische Bauelemente SESD03 VOLTAGE: 3.3V 110 W Transient Voltage Suppressors Diode |
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