Product Summary

Part Number

IRFN044

60V

0.040

Ω

44A

Features:

s

Avalanche Energy Rating

s

Dynamic dv/dt Rating

s

Simple Drive Requirements

s

Ease of Paralleling

s

Hermetically Sealed

s

Surface Mount

s

Light-weight

N-CHANNEL

Provisional Data Sheet No. PD-9.1545

60 Volt, 0.040

Ω

Ω

Ω

Ω

Ω HEXFET

HEXFET technology is the key to International

Rectifier’s advanced line of power MOSFET transis-

tors. The efficient geometry achieves very low on-

state resistance combined with high transconductance.

HEXFET transistors also feature all of the well-es-

tablish advantages of MOSFETs, such as voltage

control, very fast switching, ease of paralleling and

electrical parameter temperature stability. They are

well-suited for applications such as switching power

supplies, motor controls, inverters, choppers, audio

amplifiers, and high energy pulse circuits.

The Surface Mount Device (SMD-1) package repre-

sents another step in the continual evolution of sur-

face mount technology. The SMD-1 will give

designers the extra flexibility they need to increase

circuit board density. International Rectifier has en-

gineered the SMD-1 package to meet the specific

needs of the power market by increasing the size of

the termination pads, thereby enhancing thermal and

electrical performance.

IRFN044

Absolute Maximum Ratings

Parameter

IRFN044

Units

ID @ VGS = 10V, TC = 25°C

Continuous Drain Current

44

ID @ VGS = 10V, TC = 100°C Continuous Drain Current

27

IDM

176

PD @ TC = 25°C

Max. Power Dissipation

125

W

Linear Derating Factor

1.0

VGS

Gate-to-Source Voltage

±20

V

EAS

340

mJ

IAR

44

A

EAR

12.5

mJ

dv/dt

4.5

V/ns

TJ

Operating Junction

-55 to 150

TSTG

Storage Temperature Range

Package Mounting Surface Temperature

300 (for 5 seconds)

Weight

2.6 (typical)

g

A

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