IRFP360LC datasheet(1/8 Pages) IRF

部件名	IRFP360LC

功能描述	Power MOSFET(Vdss=400V, Rds(on)=0.20ohm, Id=23A)

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制造商	IRF [International Rectifier]

网页	http://www.irf.com

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IRFP360LC

HEXFET® Power MOSFET

PD - 9.1230

Revision 0

VDSS = 400V

RDS(on) = 0.20Ω

ID = 23A

Ultra Low Gate Charge

Reduced Gate Drive Requirement

Enhanced 30V Vgs Rating

Reduced Ciss, Coss, Crss

Isolated Central Mounting Hole

Dynamic dv/dt Rated

Repetitive Avalanche Rated

Absolute Maximum Ratings

Parameter

Max.

Units

ID @ TC = 25°C

Continuous Drain Current, V GS @ 10V

23

ID @ TC = 100°C

Continuous Drain Current, V GS @ 10V

14

A

IDM

Pulsed Drain Current

92

PD @TC = 25°C

Power Dissipation

280

W

Linear Derating Factor

2.2

W/°C

VGS

Gate-to-Source Voltage

±30

V

EAS

Single Pulse Avalanche Energy

1200

mJ

IAR

Avalanche Current

23

A

EAR

Repetitive Avalanche Energy

28

mJ

dv/dt

Peak Diode Recovery dv/dt

4.0

V/ns

TJ

Operating Junction and

-55 to + 150

TSTG

Storage Temperature Range

°C

Soldering Temperature, for 10 seconds

300 (1.6mm from case)

Mounting torque, 6-32 or M3 screw.

10 lbf•in (1.1N•m)

Parameter

Min.

Typ.

Max.

Units

RθJC

Junction-to-Case

––––

0.45

RθCS

Case-to-Sink, Flat, Greased Surface

––––

0.24

––––

°C/W

RθJA

Junction-to-Ambient

––––

40

Thermal Resistance

Description

This new series of Low Charge HEXFET Power MOSFETs achieve significantly

lower gate charge over conventional MOSFETs.

Utilizing advanced Hexfet

technology the device improvements allow for reduced gate drive requirements,

faster switching speeds and increased total system savings.

These device

improvements combined with the proven ruggedness and reliability of HEXFETs

offer the designer a new standard in power transistors for switching applications.

The TO-247 package is preferred for commercial-industrial applications where

higher power levels preclude the use of TO-220 devices. The TO-247 is similar

but superior to the earlier TO-218 package because of its isolated mounting hole.

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类似零件编号 - IRFP360LC

制造商	部件名	数据表	功能描述
Vishay Siliconix	IRFP360LC	260Kb / 8P	Power MOSFET 24-Jun-08
Vishay Siliconix	IRFP360LC	1Mb / 9P	Power MOSFET 14-Mar-11
Inchange Semiconductor ...	IRFP360LC	325Kb / 2P	isc N-Channel MOSFET Transistor
Vishay Siliconix	IRFP360LC	1Mb / 11P	Power MOSFET 14-Mar-11
Vishay Siliconix	IRFP360LC	311Kb / 10P	Power MOSFET 24-Jan-2022

More results

类似说明 - IRFP360LC

制造商	部件名	数据表	功能描述
International Rectifier	IRF360	139Kb / 7P	TRANSISTORS N-CHANNEL(Vdss=400V, Rds(on)=0.20ohm, Id=25A)
	IRF520NS	185Kb / 10P	Power MOSFET(Vdss=100V, Rds(on)=0.20ohm, Id=9.7A)
	IRF9530N	113Kb / 8P	Power MOSFET(Vdss=-100V, Rds(on)=0.20ohm, Id=-14A)
	IRF9530NS	173Kb / 10P	Power MOSFET(Vdss=-100V, Rds(on)=0.20ohm, Id=-14A)
	IRFD014	171Kb / 6P	Power MOSFET(Vdss=60V, Rds(on)=0.20ohm, Id=1.7A)
	IRFI360	210Kb / 8P	TRANSISTOR N-CHANNEL(Vdss=400V, Rds(on)=0.20ohm, Id=25A)
	IRFL014	176Kb / 6P	Power MOSFET(Vdss=60V, Rds(on)=0.20ohm, Id=2.7A)
	IRFL4310	313Kb / 9P	Power MOSFET(Vdss=100V, Rds(on)=0.20ohm, Id=1.6A)
	IRFP360	164Kb / 6P	Power MOSFET(Vdss=400V, Rds(on)=0.20ohm, Id=23A)
	IRLZ14SL	291Kb / 10P	Power MOSFET(Vdss=60V, Rds(on)=0.20ohm, Id=10A)