IRFZ44R

8/24/00

Absolute Maximum Ratings

Parameter

Typ.

Max.

Units

Junction-to-Case

–––

1.0

Case-to-Sink, Flat, Greased Surface

0.50

–––

°C/W

Junction-to-Ambient

–––

62

Thermal Resistance

www.irf.com

1

S

D

G

TO-220AB

Rectifier utilize advanced processing techniques to achieve

extremely low on-resistance per silicon area. This benefit,

combined with the fast switching speed and ruggedized device

design that HEXFET power MOSFETs are well known for,

provides the designer with an extremely efficient and reliable

device for use in a wide variety of applications.

The TO-220 package is universally preferred for all commercial-

industrial applications at power dissipation levels to

approximately 50 watts. The low thermal resistance and low

package cost of the TO-220 contribute to its wide acceptance

throughout the industry.

for Linear/Audio Applications

Description

Parameter

Max.

Units

50*

36

A

Pulsed Drain Current



200

Power Dissipation

150

W

Linear Derating Factor

1.0

W/°C

Gate-to-Source Voltage

±20

V

Single Pulse Avalanche Energy

‚

100

mJ

dv/dt

Peak Diode Recovery dv/dt

ƒ

4.5

V/ns

Operating Junction and

-55 to + 175

Storage Temperature Range

Soldering Temperature, for 10 seconds

300 (1.6mm from case )

°C

Mounting Torque, 6-32 or M3 screw

10 lbf•in (1.1 N•m)

PD - 93956