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IRG4BC30FD 数据表(PDF) 1 Page - International Rectifier

部件名 IRG4BC30FD
功能描述  INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE(Vces=600V, Vce(on)typ.=1.59V, @Vge=15V, Ic=17A)
PDF  10 Pages
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制造商  IRF [International Rectifier]
网页  http://www.irf.com
标志 IRF - International Rectifier

IRG4BC30FD 数据表(HTML) 1 Page - International Rectifier

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IRG4BC30FD
INSULATED GATE BIPOLAR TRANSISTOR WITH
ULTRAFAST SOFT RECOVERY DIODE
Features
Features
Features
Features
Features
E
G
n-cha n ne l
C
VCES = 600V
VCE(on) typ. = 1.59V
@VGE = 15V, IC = 17A
Parameter
Min.
Typ.
Max.
Units
RqJC
Junction-to-Case - IGBT
------
------
1.2
RqJC
Junction-to-Case - Diode
------
------
2.5
°C/W
RqCS
Case-to-Sink, flat, greased surface
------
0.50
------
RqJA
Junction-to-Ambient, typical socket mount
-----
-----
80
Wt
Weight
------
2 (0.07)
------
g (oz)
Thermal Resistance
Fast CoPack IGBT
12/8/98
Absolute Maximum Ratings
Parameter
Max.
Units
VCES
Collector-to-Emitter Voltage
600
V
IC @ TC = 25°C
Continuous Collector Current
31
IC @ TC = 100°C
Continuous Collector Current
17
ICM
Pulsed Collector Current

120
A
ILM
Clamped Inductive Load Current
‚
120
IF @ TC = 100°C
Diode Continuous Forward Current
12
IFM
Diode Maximum Forward Current
120
VGE
Gate-to-Emitter Voltage
± 20
V
PD @ TC = 25°C
Maximum Power Dissipation
100
PD @ TC = 100°C
Maximum Power Dissipation
42
TJ
Operating Junction and
-55 to +150
TSTG
Storage Temperature Range
°C
Soldering Temperature, for 10 sec.
300 (0.063 in. (1.6mm) from case)
Mounting Torque, 6-32 or M3 Screw.
10 lbf•in (1.1 N•m)
• Fast: Optimized for medium operating
frequencies ( 1-5 kHz in hard switching, >20
kHz in resonant mode).
• Generation 4 IGBT design provides tighter
parameter distribution and higher efficiency than
Generation 3
• IGBT co-packaged with HEXFREDTM ultrafast,
ultra-soft-recovery anti-parallel diodes for use in
bridge configurations
• Industry standard TO-220AB package
Benefits
• Generation -4 IGBT's offer highest efficiencies
available
• IGBT's optimized for specific application conditions
• HEXFRED diodes optimized for performance with
IGBT's . Minimized recovery characteristics require
less/no snubbing
• Designed to be a "drop-in" replacement for equivalent
industry-standard Generation 3 IR IGBT's
PD -91451B
W
TO-220AB
www.irf.com
1


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