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NE5820M53 数据表(PDF) 3 Page - Renesas Technology Corp

部件名 NE5820M53
功能描述  P-channel MOS Field Effect Transistor for Impedance Converter of Microphone
PDF  8 Pages
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制造商  RENESAS [Renesas Technology Corp]
网页  http://www.renesas.com
标志 RENESAS - Renesas Technology Corp

NE5820M53 数据表(HTML) 3 Page - Renesas Technology Corp

  NE5820M53_15 Datasheet HTML 1Page - Renesas Technology Corp NE5820M53_15 Datasheet HTML 2Page - Renesas Technology Corp NE5820M53_15 Datasheet HTML 3Page - Renesas Technology Corp NE5820M53_15 Datasheet HTML 4Page - Renesas Technology Corp NE5820M53_15 Datasheet HTML 5Page - Renesas Technology Corp NE5820M53_15 Datasheet HTML 6Page - Renesas Technology Corp NE5820M53_15 Datasheet HTML 7Page - Renesas Technology Corp NE5820M53_15 Datasheet HTML 8Page - Renesas Technology Corp  
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NE5820M53
R09DS0005EJ0200 Rev.2.00
Page 3 of 6
May 20, 2011
TYPICAL CHARACTERISTICS (TA = +25
°C, unless otherwise specified)
0
–2
–4
–6
–8
40
60
120
VDD = 2 V
Cin = 3 pF
RL = 15 k
Ω
Vin = 10 mVrms
f = 1 kHz
100
Consumption Current IDD ( A)
VOLTAGE GAIN vs.
CONSUMPTION CURRENT
μ
80
100
10
1
0.1
0.01
0.001
10
1 000
VDD = 2 V
Cin = 3 pF
RL = 15 k
Ω
f = 1 kHz
100
Output Voltage Vout (mVrms)
TOTAL HARMONIC DISTORTION
vs. OUTPUT VOLTAGE
Frequency f (Hz)
VOLTAGE GAIN vs. FREQUENCY
0
–2
–4
–6
–8
1
10
100 000
VDD = 2 V
Cin = 3 pF
RL = 15 k
Ω
Vin = 10 mVrms
100
1 000
10 000
–90
–100
–110
–120
02
10
Cin = 3 pF
RL = 15 k
Ω
Vin = 0 Vrms
468
1
9
357
Supply Voltage VDD (V)
OUTPUT NOISE VOLTAGE
vs. SUPPLY VOLTAGE
0
–2
–4
–6
–8
02
10
Cin = 3 pF
RL = 15 k
Ω
Vin = 10 mVrms
f = 1 kHz
468
1
9
357
Supply Voltage VDD (V)
VOLTAGE GAIN vs. SUPPLY VOLTAGE
600
200
300
400
500
0
410
RL = 15 k
Ω
100
0
8
26
39
7
15
Supply Voltage VDD (V)
vs. SUPPLY VOLTAGE
CONSUMPTION CURRENT
Remark The graphs indicate nominal characteristics.
<R>



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