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IRG4PC30FD 数据表(PDF) 2 Page - International Rectifier |
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IRG4PC30FD 数据表(HTML) 2 Page - International Rectifier |
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2 / 10 page  IRG4PC30FD 2 www.irf.com Parameter Min. Typ. Max. Units Conditions Qg Total Gate Charge (turn-on) ––– 51 77 IC = 17A Qge Gate - Emitter Charge (turn-on) ––– 7.9 12 nC VCC = 400V See Fig. 8 Qgc Gate - Collector Charge (turn-on) ––– 19 28 VGE = 15V td(on) Turn-On Delay Time ––– 42 ––– TJ = 25°C tr Rise Time ––– 26 ––– ns IC = 17A, VCC = 480V td(off) Turn-Off Delay Time ––– 230 350 VGE = 15V, RG = 23Ω tf Fall Time ––– 160 230 Energy losses include "tail" and Eon Turn-On Switching Loss ––– 0.63 ––– diode reverse recovery. Eoff Turn-Off Switching Loss ––– 1.39 ––– mJ See Fig. 9, 10, 11, 18 Ets Total Switching Loss ––– 2.02 3.9 td(on) Turn-On Delay Time ––– 42 ––– TJ = 150°C, See Fig. 9, 10, 11, 18 tr Rise Time ––– 27 ––– ns IC = 17A, VCC = 480V td(off) Turn-Off Delay Time ––– 310 ––– VGE = 15V, RG = 23Ω tf Fall Time ––– 310 ––– Energy losses include "tail" and Ets Total Switching Loss ––– 3.2 ––– mJ diode reverse recovery. LE Internal Emitter Inductance ––– 13 ––– nH Measured 5mm from package Cies Input Capacitance ––– 1100 ––– VGE = 0V Coes Output Capacitance ––– 74 ––– pF VCC = 30V See Fig. 7 Cres Reverse Transfer Capacitance ––– 14 ––– ƒ = 1.0MHz trr Diode Reverse Recovery Time ––– 42 60 TJ = 25°C See Fig. ––– 80 120 TJ = 125°C 14 IF = 12A Irr Diode Peak Reverse Recovery Current ––– 3.5 6.0 A TJ = 25°C See Fig. ––– 5.6 10 TJ = 125°C 15 VR = 200V Qrr Diode Reverse Recovery Charge ––– 80 180 TJ = 25°C See Fig. ––– 220 600 TJ = 125°C 16 di/dt 200A/µs di(rec)M/dt Diode Peak Rate of Fall of Recovery ––– 180 ––– TJ = 25°C See Fig. During tb ––– 120 ––– TJ = 125°C 17 Parameter Min. Typ. Max. Units Conditions V(BR)CES Collector-to-Emitter Breakdown Voltage S 600 ––– ––– VVGE = 0V, IC = 250µA ∆V(BR)CES/∆TJ Temperature Coeff. of Breakdown Voltage ––– 0.69 ––– V/°CVGE = 0V, IC = 1.0mA VCE(on) Collector-to-Emitter Saturation Voltage ––– 1.59 1.8 IC = 17A VGE = 15V ––– 1.99 ––– VIC = 31A See Fig. 2, 5 ––– 1.70 ––– IC = 17A, TJ = 150°C VGE(th) Gate Threshold Voltage 3.0 ––– 6.0 VCE = VGE, IC = 250µA ∆VGE(th)/∆TJ Temperature Coeff. of Threshold Voltage ––– -11 ––– mV/°CVCE = VGE, IC = 250µA gfe Forward Transconductance T 6.1 10 ––– SVCE = 100V, IC = 17A ICES Zero Gate Voltage Collector Current ––– ––– 250 µA VGE = 0V, VCE = 600V ––– ––– 2500 VGE = 0V, VCE = 600V, TJ = 150°C VFM Diode Forward Voltage Drop ––– 1.4 1.7 V IC = 12A See Fig. 13 ––– 1.3 1.6 IC = 12A, TJ = 150°C IGES Gate-to-Emitter Leakage Current ––– ––– ±100 nA VGE = ±20V Switching Characteristics @ TJ = 25°C (unless otherwise specified) Electrical Characteristics @ TJ = 25°C (unless otherwise specified) nC A/µs ns |
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