IRG4PC40F datasheet(1/8 Pages) IRF

部件名	IRG4PC40F

功能描述	INSULATED GATE BIPOLAR TRANSISTOR(Vces=600V, Vce(on)typ.=1.50V, @Vge=15V, Ic=27A)

PDF	8 Pages

Scroll/Zoom	100%

制造商	IRF [International Rectifier]

网页	http://www.irf.com

标志

1 / 8 page

Parameter

Max.

Units

VCES

Collector-to-Emitter Breakdown Voltage

600

V

IC @ TC = 25°C

Continuous Collector Current

49

IC @ TC = 100°C

Continuous Collector Current

27

A

ICM

Pulsed Collector Current

Q

200

ILM

Clamped Inductive Load Current

R

200

VGE

Gate-to-Emitter Voltage

± 20

V

EARV

Reverse Voltage Avalanche Energy

S

15

mJ

PD @ TC = 25°C

Maximum Power Dissipation

160

PD @ TC = 100°C

Maximum Power Dissipation

65

TJ

Operating Junction and

-55 to + 150

TSTG

Storage Temperature Range

Soldering Temperature, for 10 seconds

300 (0.063 in. (1.6mm from case )

°C

Mounting torque, 6-32 or M3 screw.

10 lbf•in (1.1N•m)

IRG4PC40F

Fast Speed IGBT

INSULATED GATE BIPOLAR TRANSISTOR

PD 91463B

E

C

G

n-channel

TO-247AC

Features

• Fast: Optimized for medium operating

frequencies ( 1-5 kHz in hard switching, >20

kHz in resonant mode).

• Generation 4 IGBT design provides tighter

parameter distribution and higher efficiency than

Generation 3

• Industry standard TO-247AC package

• Generation 4 IGBT's offer highest efficiency available

• IGBT's optimized for specified application conditions

• Designed to be a "drop-in" replacement for equivalent

industry-standard Generation 3 IR IGBT's

Benefits

VCES = 600V

VCE(on) typ.

= 1.50V

@VGE = 15V, IC = 27A

12/30/00

Parameter

Typ.

Max.

Units

RθJC

Junction-to-Case

–––

0.77

RθCS

Case-to-Sink, Flat, Greased Surface

0.24

–––

°C/W

RθJA

Junction-to-Ambient, typical socket mount

–––

40

Wt

Weight

6 (0.21)

–––

g (oz)

Thermal Resistance

Absolute Maximum Ratings

W

www.irf.com

1

类似零件编号 - IRG4PC40F

制造商	部件名	数据表	功能描述
International Rectifier	IRG4PC40F	98Kb / 35P	Fit Rate / Equivalent Device Hours
	IRG4PC40FD	214Kb / 10P	INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE(Vces=600V, Vce(on)typ.=1.50V, @Vge=15V, Ic=27A)
	IRG4PC40FD	98Kb / 35P	Fit Rate / Equivalent Device Hours
	IRG4PC40FDPBF	354Kb / 11P	INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE
	IRG4PC40FDPBF	348Kb / 10P	INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE

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类似说明 - IRG4PC40F

制造商	部件名	数据表	功能描述
International Rectifier	IRG4BC20U	167Kb / 8P	INSULATED GATE BIPOLAR TRANSISTOR(Vces=600V, Vce(on)typ.=1.85V, @Vge=15V, Ic=6.5A)
	IRG4BC30K	137Kb / 8P	INSULATED GATE BIPOLAR TRANSISTOR(Vces=600V, Vce(on)typ.=2.21V, @Vge=15V, Ic=16A)
	IRG4BC30U	167Kb / 8P	INSULATED GATE BIPOLAR TRANSISTOR(Vces=600V, Vce(on)typ.=1.95V, @Vge=15V, Ic=12A)
	IRG4BC40F	167Kb / 8P	INSULATED GATE BIPOLAR TRANSISOR(Vces=600V, Vce(on)typ.=1.50V, @Vge=15V, Ic=27A)
	IRG4BC40U	169Kb / 8P	INSULATED GATE BIPOLAR TRANSISTOR(Vces=600V, Vce(on)typ.=1.72V, @Vge=15V, Ic=20A)
	IRG4PC30F	145Kb / 8P	INSULATED GATE BIPOLAR TRANSISTOR(Vces=600V, Vce(on)typ.=1.59V, @Vge=15V, Ic=17A)
	IRG4PC40FD	214Kb / 10P	INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE(Vces=600V, Vce(on)typ.=1.50V, @Vge=15V, Ic=27A)
	IRG4PC40U	148Kb / 8P	INSULATED GATE BIPOLAR TRANSISTOR(Vces=600V, Vce(on)typ.1.72V, @Vge=15V, Ic=20A)
	IRG4PC50F	146Kb / 8P	INSULATED GATE BIPOLAR TRANSISTOR(Vces=600V, Vce(on)typ.=1.45V, @Vge=15V, Ic=39A)
	IRG4PC50U	147Kb / 8P	INSULATED GATE BIPOLAR TRANSISTOR(Vces=600V, Vce(on)typ.=1.65V, @Vge=15V, Ic=27A)

More results

IRG4PC40F 数据表(PDF) 1 Page - International Rectifier

IRG4PC40F 数据表(HTML) 1 Page - International Rectifier

类似零件编号 - IRG4PC40F

类似说明 - IRG4PC40F

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IRG4PC40F 数据表(PDF) 1 Page - International Rectifier

IRG4PC40F 数据表(HTML) 1 Page - International Rectifier

类似零件编号 - IRG4PC40F

类似说明 - IRG4PC40F

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数据表 下载

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数据表下载