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IRGPC30FD2 数据表(PDF) 1 Page - International Rectifier |
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IRGPC30FD2 数据表(HTML) 1 Page - International Rectifier |
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1 / 8 page ![]() C-109 Revision 1 IRGPC30FD2 INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE Features • Switching-loss rating includes all "tail" losses • HEXFRED TM soft ultrafast diodes • Optimized for medium operating frequency (1 to 10kHz) See Fig. 1 for Current vs. Frequency curve E G n-channel C VCES = 600V VCE(sat) ≤ 2.1V @VGE = 15V, IC = 17A Parameter Min. Typ. Max. Units RθJC Junction-to-Case - IGBT — — 1.2 RθJC Junction-to-Case - Diode — — 2.5 °C/W RθCS Case-to-Sink, flat, greased surface — 0.24 — RθJA Junction-to-Ambient, typical socket mount — — 40 Wt Weight — 6 (0.21) — g (oz) Thermal Resistance Absolute Maximum Ratings Description Co-packaged IGBTs are a natural extension of International Rectifier's well known IGBT line. They provide the convenience of an IGBT and an ultrafast recovery diode in one package, resulting in substantial benefits to a host of high-voltage, high-current, motor control, UPS and power supply applications. TO-247AC Fast CoPack IGBT PD - 9.1040 Parameter Max. Units VCES Collector-to-Emitter Voltage 600 V IC @ TC = 25°C Continuous Collector Current 31 IC @ TC = 100°C Continuous Collector Current 17 ICM Pulsed Collector Current 120 A ILM Clamped Inductive Load Current 120 IF @ TC = 100°C Diode Continuous Forward Current 12 IFM Diode Maximum Forward Current 120 VGE Gate-to-Emitter Voltage ± 20 V PD @ TC = 25°C Maximum Power Dissipation 100 W PD @ TC = 100°C Maximum Power Dissipation 42 TJ Operating Junction and -55 to +150 TSTG Storage Temperature Range °C Soldering Temperature, for 10 sec. 300 (0.063 in. (1.6mm) from case) Mounting Torque, 6-32 or M3 Screw. 10 lbf•in (1.1 N•m) Next Data Sheet Index Previous Datasheet To Order |
类似零件编号 - IRGPC30FD2 |
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类似说明 - IRGPC30FD2 |
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