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SSPS7331P 数据表(PDF) 1 Page - SeCoS Halbleitertechnologie GmbH

部件名 SSPS7331P
功能描述  P-Ch Enhancement Mode Power MOSFET
PDF  1 Pages
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制造商  SECOS [SeCoS Halbleitertechnologie GmbH]
网页  http://www.secosgmbh.com
标志 SECOS - SeCoS Halbleitertechnologie GmbH

SSPS7331P 数据表(HTML) 1 Page - SeCoS Halbleitertechnologie GmbH

  SSPS7331P_15 Datasheet HTML 1Page - SeCoS Halbleitertechnologie GmbH  
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Elektronische Bauelemente
SSPS7331P
-13.4 A , -30 V , RDS(ON) 13 m
P-Ch Enhancement Mode Power MOSFET
24-Oct-2013 Rev. B
Page 1 of 4
http://www.SeCoSGmbH.com/
Any changes of specification will not be informed individually.
B
E
F
G
g
A
e
b
θ
D
C
d
RoHS Compliant Product
A suffix of “-C” specifies halogen & lead-free
DESCRIPTION
These miniature surface mount MOSFETs
utilize a high cell density trench process to provide
low RDS(on) and to ensure minimal power loss and
heat dissipation. Typical applications are
FEATURES
Low RDS(on) provides higher efficiency and
extends battery life
Low thermal impedance copper leadframe
DFN3x3-8PP saves board space
Fast switching speed
High performance trench technology
APPLICATION
DC-DC converters and power management in portable
and battery-powered products such as computers,
printers, PCMCIA cards, cellular and cordless telephones.
PACKAGE INFORMATION
Package
MPQ
Leader Size
DFN3x3-8PP
3K
13 inch
MAXIMUM RATINGS (TA = 25°C unless otherwise specified)
Parameter
Symbol
Ratings
Unit
Drain-Source Voltage
VDS
-30
V
Gate-Source Voltage
VGS
±20
V
TA = 25°C
-13.4
A
Continuous Drain Current
1
TA = 70°C
ID
-10.2
A
Pulsed Drain Current
2
IDM
-50
A
Continuous Source Current (Diode Conduction)
1
IS
-4.6
A
TA = 25°C
3.5
W
Total Power Dissipation
1
TA = 70°C
PD
2
W
Operating Junction & Storage Temperature Range
TJ, TSTG
-55 ~ 150
°C
Thermal Resistance Ratings
t ≦ 10 sec
35
°C / W
Thermal Resistance Junction-Ambient (Max.)
1
Steady State
RθJA
81
°C / W
Notes:
1.
Surface Mounted on 1” x 1” FR4 Board.
2.
Pulse width limited by maximum junction temperature.
DFN3x3-8PP
Millimeter
Millimeter
REF.
Min.
Max.
REF.
Min.
Max.
A
0.70
0.90
θ
0
°
12
°
B
3.00BSC
b
0.20
0.40
C
0.01
0.25
d
0.65BSC
D
1.80
2.3
e
3.00BSC
E3.2BSC
g
0.70(TYP.)
F
0.01
0.20
G
2.35BSC
Top View


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