IRK.430.. Series

3

T

J

Max. junction operating temperature range

- 40 to 130

°C

Max. storage temperature range

- 40 to 150

Max. thermal resistance, junction to

0.065

K/W

Per junction, DC operation

case

0.02

K/W

heatsink

T

Mounting torque ± 10% SMAP to heatsink

6 - 8

Nm

busbar to SMAP

12 - 15

wt

Approximate weight

1500

g

Case style

Super Magn-a-Pak

See outline table

dv/dt

Maximum critical rate of rise of off-state

1000

V/µs

T

J

= 130°C., linear to V

D

= 80% V

DRM

voltage

V

INS

RMS isolation voltage

3000

V

t = 1 s

I

RRM

Maximum peak reverse and off-state

100

mA

T

J

= T

J

max., rated V

DRM

/V

RRM

applied

I

DRM

leakage current

Parameter

IRK.430..

Units Conditions

Blocking

Parameter

IRK.430..

Units Conditions

Triggering

P

GM

Maximum peak gate power

10

W

T

J

= T

J

P

G(AV)

Maximum peak average gate power

2.0

W

T

J

= T

J

max., f = 50Hz, d% = 50

+ I

GM

Maximum peak positive gate current

3.0

A

T

J

= T

J

+ V

GM

Maximum peak positive gate voltage

20

V

- V

GM

Maximum peak negative gate voltage

5.0

V

I

GT

Max. DC gate current required to trigger

200

mA

T

J

= 25°C

V

ak

12V

V

GT

DC gate voltage required to trigger

3.0

V

T

J

= 25°C

V

ak

12V

I

GD

DC gate current not to trigger

10

mA

T

J

= T

J

max.

V

GD

DC gate voltage not to trigger

0.25

V

Parameter

IRK.430..

Units Conditions

Thermal and Mechanical Specifications

A mounting compound is recommended and the

torque should be rechecked after a period of 3 hours

to allow for the spread of the compound

To Order

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