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IRLL110 数据表(PDF) 2 Page - International Rectifier

部件名 IRLL110
功能描述  Power MOSFET(Vdss=100V, Rds(on)=0.54ohm, Id=1.5A)
PDF  8 Pages
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制造商  IRF [International Rectifier]
网页  http://www.irf.com
标志 IRF - International Rectifier

IRLL110 数据表(HTML) 2 Page - International Rectifier

  IRLL110 Datasheet HTML 1Page - International Rectifier IRLL110 Datasheet HTML 2Page - International Rectifier IRLL110 Datasheet HTML 3Page - International Rectifier IRLL110 Datasheet HTML 4Page - International Rectifier IRLL110 Datasheet HTML 5Page - International Rectifier IRLL110 Datasheet HTML 6Page - International Rectifier IRLL110 Datasheet HTML 7Page - International Rectifier IRLL110 Datasheet HTML 8Page - International Rectifier  
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IRLL110
2
www.irf.com
Parameter
Min. Typ. Max. Units
Conditions
V(BR)DSS
Drain-to-Source Breakdown Voltage
100
–––
–––
V
VGS = 0V, ID = 250µA
∆V(BR)DSS/∆TJ Breakdown Voltage Temp. Coefficient
–––
0.12
–––
V/°C
Reference to 25°C, ID = 1mA
–––
–––
0.54
VGS = 5.0V, ID = 0.90A
„
–––
–––
0.76
Ω
VGS = 4.0V, ID = 0.75A
VGS(th)
Gate Threshold Voltage
1.0
–––
2.0
V
VDS = VGS, ID = 250µA
gfs
Forward Transconductance
0.57
–––
–––
S
VDS = 25V, ID = 0.90 A
–––
–––
25
µA
VDS = 100V, VGS = 0V
–––
–––
250
VDS = 80V, VGS = 0V, TJ = 125°C
Gate-to-Source Forward Leakage
–––
–––
100
nA
VGS = 10V
Gate-to-Source Reverse Leakage
–––
–––
-100
VGS = -10V
Qg
Total Gate Charge
–––
–––
6.1
ID = 5.6A
Qgs
Gate-to-Source Charge
–––
–––
2.6
nC
VDS = 80V
Qgd
Gate-to-Drain ("Miller") Charge
–––
–––
3.3
VGS = 5.0V, See Fig. 6 and 13
„
td(on)
Turn-On Delay Time
–––
9.3
–––
VDD = 50V
tr
Rise Time
–––
47
–––
ns
ID = 5.6A
td(off)
Turn-Off Delay Time
–––
16
–––
RG = 12 Ω
tf
Fall Time
–––
18
–––
RD = 8.4 Ω,
nH
Ciss
Input Capacitance
–––
250
–––
VGS = 0V
Coss
Output Capacitance
–––
80
–––
pF
VDS = 25V
Crss
Reverse Transfer Capacitance
–––
15
–––
ƒ = 1.0MHz, See Fig. 5
Electrical Characteristics @ TJ = 25°C (unless otherwise specified)
IGSS
RDS(on)
StaticDrain-to-SourceOn-Resistance
IDSS
Drain-to-Source Leakage Current
 Repetitive rating; pulse width limited by
max. junction temperature. ( See fig. 11 )
ƒ I
SD ≤5.6A, di/dt ≤ 75A/µs, VDD ≤ V(BR)DSS,
TJ ≤ 150°C
Notes:
‚ VDD=25V, starting TJ = 25°C, L = 25 mH
RG = 25Ω, IAS = 1.5A. (See Figure 12)
„ Pulse width ≤ 300µs; duty cycle ≤ 2%.
Parameter
Min. Typ. Max. Units
Conditions
IS
Continuous Source Current
MOSFET symbol
(Body Diode)
showing the
ISM
Pulsed Source Current
integral reverse
(Body Diode)

p-n junction diode.
VSD
Diode Forward Voltage
–––
–––
2.5
V
TJ = 25°C, IS = 1.5A, VGS = 0V
„
trr
Reverse Recovery Time
–––
110
130
ns
TJ = 25°C, IF = 5.6A
Qrr
Reverse RecoveryCharge
–––
0.50
0.65
µC
di/dt = 100A/µs
„
ton
Forward Turn-On Time
Intrinsic turn-on time is negligible (turn-on is dominated by LS+LD)
–––
–––
–––
–––
12
1.5
A
S
D
G
Between lead, 6mm(0.25in)
from package and center
of die contact.
LS
Internal Source Inductance
Internal Drain Inductance
LD
–––
4.0
–––
–––
6.0
–––
Source-Drain Ratings and Characteristics



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