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STESD05CL 数据表(PDF) 2 Page - SeCoS Halbleitertechnologie GmbH |
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STESD05CL 数据表(HTML) 2 Page - SeCoS Halbleitertechnologie GmbH |
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2 / 3 page ![]() Elektronische Bauelemente STESD05CL 40W, 5V Low Capacitance ESD Protection (Bi-directional) 15-May-2014 Rev. B Page 2 of 3 http://www.SeCoSGmbH.com/ Any changes of specification will not be informed individually. ABSOLUTE MAXIMUM RATINGS (TA=25°C unless otherwise specified) Rating Symbol Value Unit Air contact ± 25 IEC 61000-4-2 (ESD) 1 Contact Model ± 25 JESD22-A114-B ESD Voltage 1 Per Human Body Model ± 16 ESD Voltage 1 Machine Model VESD ± 0.4 kV Peak pulse power 2 PPP 40 W Peak pulse current 2 IPP 4 A Storage temperature range TJ, TSTG 150, -55 ~ 150 °C Lead Solder Temperature − Maximum (10 Second Duration) TL 260 °C Note: 1. Device stressed with ten non-repetitive ESD pulses. 2. Non-repetitive current pulse 8/20µs exponential decay waveform according to IEC61000-4-5. ELECTRICAL CHARACTERISTICS (TA=25°C unless otherwise specified) Parameter Symbol Condition Min. Typ. Max. Units Reverse stand off voltage 1 VRWM - - 5 V Reveres leakage current IR VRWM=5V - - 0.1 μA Reveres breakdown voltage VBR IT=1mA 5.8 - 8 V Clamping Voltage 2 VC IPP=4A - - 10 V Junction capacitance CJ f=1MHz, VR=0 - 12 15 pF Note: 1. Other voltages available upon request. 2. Non-repetitive current pulse 8/20μs exponential decay waveform according to IEC61000-4-5 ESD STANDARDS COMPLIANCE |
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