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AN1542 数据表(PDF) 2 Page - STMicroelectronics

部件名 AN1542
功能描述  THE THERMAL RUNAWAY LAW IN SCHOTTKY
PDF  6 Pages
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制造商  STMICROELECTRONICS [STMicroelectronics]
网页  http://www.st.com
标志 STMICROELECTRONICS - STMicroelectronics

AN1542 数据表(HTML) 2 Page - STMicroelectronics

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APPLICATION NOTE
2/6
The risk of thermal runaway comes from the fact
that leakage current increases quickly with the
junction temperature.
3. THERMAL RUNAWAY RISK
Reverse
current
Reverse
losses
Junction
temperature
Fig. 3: Thermal runaway diagram
Using a Schottky as OR-ing function provides a
very low forward voltage drop. But when the diode
is blocking because its associated supply has a
fault in short circuit mode, the diode has to operate
in reverse mode with high junction temperature
(due to preceding forward losses) and so with rela-
tively high reverse current.
This high reverse current can generate high re-
verse losses, and so increase junction tempera-
ture, and so reverse current as well… This is the
thermal runaway phenomenon.
3.1. Problems
In the classical simple case where both the following
assumptions are made:
s
Constant thermal resistance system
s
OR-ing diode on its own heatsink
The reverse losses in the Schottky diode, due to
associated SMPS short circuit failure, is a mo-
notonous function of the time. Consequently the
thermal runaway diagram of fig. 3 is covered in
only one rotation- sense.
To determine if the Power Schottky will goes into
thermal runaway mode consists of finding the ele-
ments that will determine the rotation sense of
fig. 3.
During the forward mode, the forward current (IF)
defines the junction temperature (Tj) (linked to
forward voltage (VF), device thermal resistance
Rth(j-a)) and ambient temperature (Tamb):
TT
R
I xV
jamb
th j a
F
F
I fwd
=+
()
@
()
During the fast mode change of the diode (from
the forward mode to the reverse one, the change
is fast in comparison to device thermal constant),
the junction temperature due to the preceding for-
ward mode stay continuous (c.f. fig. 5) and will de-
termine the leakage current (Irev) (linked to the
reverse voltage Vrev):
()
(
)
(
)
IT V
I
C V
e
rev
j
rev
rev
rev
cT
C
j
;;
×
−°
100
100
c
≈ 0.055°C-1 (thermal constant)
This reverse current will determine the new junc-
tion temperature trend (linked to reverse voltage
and device thermal resistance). This variation
trend between the initial junction temperature (due
to forward mode) and the new one (due to reverse
mode) gives the Tj variation and the rotation-sense
in fig. 3.
In a constant thermal resistance system, the ther-
mal stability can be determined by comparing for-
ward losses (Pfwd) in the power Schottky just
before the SMPS failure (t0-
δt) and the reverse
losses (Prev) occurring just after (t0+
δt) the even-
tual SMPS short-circuited fault.
3.2. Result in classical cases
The stability can be guaranteed if Pfwd >Prev @t0
The problem is to quantify the risk of thermal
runaway in order to prevent it.



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