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AN1542 数据表(PDF) 2 Page - STMicroelectronics |
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AN1542 数据表(HTML) 2 Page - STMicroelectronics |
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2 / 6 page ![]() APPLICATION NOTE 2/6 The risk of thermal runaway comes from the fact that leakage current increases quickly with the junction temperature. 3. THERMAL RUNAWAY RISK Reverse current Reverse losses Junction temperature Fig. 3: Thermal runaway diagram Using a Schottky as OR-ing function provides a very low forward voltage drop. But when the diode is blocking because its associated supply has a fault in short circuit mode, the diode has to operate in reverse mode with high junction temperature (due to preceding forward losses) and so with rela- tively high reverse current. This high reverse current can generate high re- verse losses, and so increase junction tempera- ture, and so reverse current as well… This is the thermal runaway phenomenon. 3.1. Problems In the classical simple case where both the following assumptions are made: s Constant thermal resistance system s OR-ing diode on its own heatsink The reverse losses in the Schottky diode, due to associated SMPS short circuit failure, is a mo- notonous function of the time. Consequently the thermal runaway diagram of fig. 3 is covered in only one rotation- sense. To determine if the Power Schottky will goes into thermal runaway mode consists of finding the ele- ments that will determine the rotation sense of fig. 3. During the forward mode, the forward current (IF) defines the junction temperature (Tj) (linked to forward voltage (VF), device thermal resistance Rth(j-a)) and ambient temperature (Tamb): TT R I xV jamb th j a F F I fwd =+ − () @ () During the fast mode change of the diode (from the forward mode to the reverse one, the change is fast in comparison to device thermal constant), the junction temperature due to the preceding for- ward mode stay continuous (c.f. fig. 5) and will de- termine the leakage current (Irev) (linked to the reverse voltage Vrev): () ( ) ( ) IT V I C V e rev j rev rev rev cT C j ;; =° × −° 100 100 c ≈ 0.055°C-1 (thermal constant) This reverse current will determine the new junc- tion temperature trend (linked to reverse voltage and device thermal resistance). This variation trend between the initial junction temperature (due to forward mode) and the new one (due to reverse mode) gives the Tj variation and the rotation-sense in fig. 3. In a constant thermal resistance system, the ther- mal stability can be determined by comparing for- ward losses (Pfwd) in the power Schottky just before the SMPS failure (t0- δt) and the reverse losses (Prev) occurring just after (t0+ δt) the even- tual SMPS short-circuited fault. 3.2. Result in classical cases The stability can be guaranteed if Pfwd >Prev @t0 The problem is to quantify the risk of thermal runaway in order to prevent it. |
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