IRFF9130

2

www.irf.com

Thermal Resistance

Parameter

Min Typ Max

Units

Test Conditions

RthJC

Junction-to-Case

—

—

5.0

RthJA

Junction-to-Ambient

—

—

175

Typical socket mount

°C/W

Source-Drain Diode Ratings and Characteristics

Parameter

Min Typ Max Units

Test Conditions

IS

Continuous Source Current (Body Diode)

—

—

-6.5

ISM

Pulse Source Current (Body Diode) ➀

—

—

-25

VSD

Diode Forward Voltage

—

—

-4.7

V

trr

Reverse Recovery Time

—

—

250

nS

Tj = 25°C, IF = -6.5A, di/dt ≤ -100A/µs

QRR

Reverse Recovery Charge

—

—

3.0

µC

VDD ≤ -50V ➃

ton

Forward Turn-On Time

Intrinsic turn-on time is negligible. Turn-on speed is substantially controlled by LS + LD.

A

Note: Corresponding Spice and Saber models are available on the G&S Website.

For footnotes refer to the last page

Parameter

Min

Typ Max Units

Test Conditions

BVDSS

Drain-to-Source Breakdown Voltage

-100

—

—

V

VGS = 0V, ID = -1.0mA

∆BVDSS/∆TJ Temperature Coefficient of Breakdown

—

-0.10

—

V/°C

Reference to 25°C, ID = -1.0mA

Voltage

RDS(on)

Static Drain-to-Source On-State

—

—

0.30

VGS = -10V, ID = -4.1A ➃

Resistance

—

—

0.345

VGS =-10V, ID =-6.5A ➃

VGS(th)

Gate Threshold Voltage

-2.0

—

-4.0

V

VDS = VGS, ID = -250µA

gfs

Forward Transconductance

2.5

—

—

S ( )

VDS > -15V, IDS = -4.1A ➃

IDSS

Zero Gate Voltage Drain Current

—

—

-25

VDS= -80V, VGS=0V

—

—

-250

µA

VDS = -80V

VGS = 0V, TJ = 125°C

IGSS

Gate-to-Source Leakage Forward

—

—

-100

VGS = -20V

IGSS

Gate-to-Source Leakage Reverse

—

—

100

nA

VGS = 20V

Qg

Total Gate Charge

14.7

—

34.8

VGS =-10V, ID = -6.5A

Qgs

Gate-to-Source Charge

1.0

—

7.1

nC

VDS= -50V

Qgd

Gate-to-Drain (‘Miller’) Charge

2.0

—

21

Turn-On Delay Time

—

—

60

VDD = -50V, ID = -6.5A,

tr

Rise Time

—

—

140

VGS =-10V,RG =7.5Ω

Turn-Off Delay Time

—

—

140

tf

Fall Time

—

—

140

LS + LD

Total Inductance

—

7.0

—

Ciss

Input Capacitance

—

800

VGS = 0V, VDS = -25V

Coss

Output Capacitance

—

350

—

pF

f = 1.0MHz

Crss

Reverse Transfer Capacitance

—

125

—

nH

ns

Ω

Measured from drain lead (6mm/0.25in. from

package) to source lead (6mm/0.25in. from

package)