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UM0670 数据表(PDF) 39 Page - STMicroelectronics |
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UM0670 数据表(HTML) 39 Page - STMicroelectronics |
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39 / 43 page ![]() Design calculation UM0670 39/43 Doc ID 15327 Rev 2 Equation 10 Power MOSFET conduction loss is: Equation 11 Where the power MOSFET chosen is the STF9NM50N (see datasheet Section 11: References and related materials: 3.) and its RDS(on) for 70 °C is: Equation 12 Power MOSFET switching losses can be approximately calculated (turn OFF time was measured 120 ns - see Figure 19): Equation 13 The total power loss on the power MOSFET is 1.839 W, so the heat sink can be calculated from following equation: Equation 14 And maximum heat sink-to-ambient resistance is: Equation 15 The heat sink used in the power MOSFET on the STEVAL-ILL013V1 has a thermal resistance of 13.5 °C / W, and therefore this heat sink is optimized for this design. The last power component remaining to be calculated is the power diode. The diode conducts during the OFF time, and therefore its average current is: Equation 16 l RMS 2 D × l AVR 2 l PP 2 12 -------- + 0.2 1 0.8 2 12 ----------- + 0.21 = == P CON l RM S 2 R DS ON () × 70 ° C () 0.21 0.756 0.159W = × == R DS ON () ° C () R DS ON () ° C () 1.35 0.56 1.35 0.756 Ω = × = × = P SW V IN I MAX t OFF SW f × × × 2 -------------------------------------------------------------------- 400 1.4 120 10 9 – 50 10 3 × × × × × 2 --------------------------------------------------------------------------------------------- 1.68W = = = P TOT T JM AX MOSFET T A – R thJC R th CH R thHA ++ ------------------------------------------------------------ = R thH A T JM AX MOSFET T A – P TOT ------------------------------------------------------ R thJC – R th C H 70 30 – 1.839 ------------------- 5 – 0.5 16.25 ° CW ⁄ = – = – < I AVR D 1D – () I MAX I MIN + 2 ------------------------------ × 10.2 – () 1.4 0.6 + 2 ----------------------- × 0.8A = = = |
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