RGBC40M datasheet(1/2 Pages) IRF

部件名	RGBC40M

功能描述	INSULATED GATE BIPOLAR TRANSISTOR(Vces=600V, @Vge=15V, Ic=24A)

PDF	2 Pages

Scroll/Zoom	100%

制造商	IRF [International Rectifier]

网页	http://www.irf.com

标志

1 / 2 page

C-313

Revision 1

Parameter

Min.

Typ.

Max.

Units

RθJC

Junction-to-Case

—

0.77

RθCS

Case-to-Sink, flat, greased surface

—

0.50

—

°C/W

RθJA

Junction-to-Ambient, typical socket mount

—

80

Wt

Weight

—

2 (0.07)

—

g (oz)

IRGBC40M

Short Circuit Rated

Fast IGBT

INSULATED GATE BIPOLAR TRANSISTOR

Features

• Short circuit rated - 10µs @ 125°C, VGE = 15V

• Switching-loss rating includes all "tail" losses

• Optimized for medium operating frequency (1 to

10kHz)

VCES = 600V

VCE(sat) ≤ 3.0V

@VGE = 15V, IC = 24A

E

C

G

n-channel

Absolute Maximum Ratings

Parameter

Max.

Units

VCES

Collector-to-Emitter Voltage

600

V

IC @ TC = 25°C

Continuous Collector Current

40

IC @ TC = 100°C

Continuous Collector Current

24

A

ICM

Pulsed Collector Current

80

ILM

Clamped Inductive Load Current

80

tsc

Short Circuit Withstand Time

10

µs

VGE

Gate-to-Emitter Voltage

±20

V

EARV

Reverse Voltage Avalanche Energy

15

mJ

PD @ TC = 25°C

Maximum Power Dissipation

160

W

PD @ TC = 100°C

Maximum Power Dissipation

65

TJ

Operating Junction and

-55 to +150

TSTG

Storage Temperature Range

°C

Soldering Temperature, for 10 sec.

300 (0.063 in. (1.6mm) from case)

Mounting torque, 6-32 or M3 screw.

10 lbf•in (1.1N•m)

Preliminary Data Sheet PD - 9.1074

Thermal Resistance

Insulated Gate Bipolar Transistors (IGBTs) from International Rectifier have

higher usable current densities than comparable bipolar transistors, while at

the same time having simpler gate-drive requirements of the familiar power

MOSFET. They provide substantial benefits to a host of high-voltage, high-

current applications.

These new short circuit rated devices are especially suited for motor control

and other applications requiring short circuit withstand capability.

Description

TO-220AB

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制造商	部件名	数据表	功能描述
International Rectifier	IRGBC20M-S	247Kb / 6P	INSULATED GATE BIPOLAR TRANSISTOR(Vces=600V, @Vge=15V, Ic=8.0A)
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	IRGBC40M-S	88Kb / 2P	INSULATED GATE BIPOLAR TRANSISTOR(Vces=600V, @Vge=15V, Ic=24A)
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	IRGPC30M	250Kb / 6P	INSULATED GATE BIPOLAR TRANSISTOR(Vces=600V, @Vge=15V, Ic=16A)
	IRGPC30S	253Kb / 6P	INSULATED GATE BIPOLAR TRANSISTOR(Vces=600V, @Vge=15V, Ic=18A)
	IRGPC40M	91Kb / 2P	INSULATED GATE BIPOLAR TRANSISTOR(Vces=600V, @Vge=15V, Ic=24A)