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AN827 数据表(PDF) 4 Page - STMicroelectronics |
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AN827 数据表(HTML) 4 Page - STMicroelectronics |
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4 / 20 page ![]() AN827 APPLICATION NOTE 4/20 Vcap > Vout + ∆Vripple + Vmargin = 400 + 8 + 40 = 448V Where: Vout is the nominal regulated DC output voltage ∆Vripple is the ac voltage superimposed on the regulated DC output voltage ∆Vmargin is the allowance for tolerances in Vout and additional margin before OVP intervention The capacitor chosen has a voltage rating of 450VDC. The overvoltage trip level of Pin 3 (OVP) must be set below 450VDC. Power Mosfet The power mosfet, Q1, is used as the active switch due to its high frequency capability, ability to be driven di- rectly from the controller and availability. The main criteria for its selection include the drain to source breakdown voltage (BVdss), delivered power and temperature considerations. Voltage Rating: The power mosfet has to sustain the maximum boosted output dc voltage according to the following equation: BVdss > Vout + ∆Vripple + Vmargin = 400 + 8 + 40 = 448V The power mosfet chosen has a BVdss of 500V. Power Rating: The main parameters to consider are Rdson and the thermal characteristics of the package and heatsink. The main losses in the power mosfet are the conduction and switching losses. The switching losses can be sepa- rated into two quantities, capacitive and crossover losses. The switching losses are dependent on the mosfet current di/dt. The maximum conduction (on-state) power losses can be calculated according to the following equations: IQrmsmax = 5.42A Ponmax = IQrms 2max · R(DS)on max = 5.422 · 0.54 = 15.86W Where: IQrmsmax is the max. power mosfet rms current Virmsmin is the min. specified rms input voltage R(DS)on typ. = 0.27Ω at 25°C at 10A, VGS = 10V R(DS)on max = 0.54Ω at 100°C The capacitive switching losses at turn-on are calculated as follows: I Qm sm ax P out η 2 V irms min ⋅ ----------------------------------------- 2 16 2 V irms min ⋅⋅ 3 π V out ⋅ ----------------------------------------------- – 500 0.9 ---------- 288 ⋅ ------------------ 2 16 2 88 ⋅⋅ 3 π 400 ⋅ ----------------------------- – ⋅ = ⋅ = P capac i c e tan 3.3 C oss V out 1.5 1 2 ---C ex t V out 2 ⋅ + ⋅ f sw 2W = ⋅⋅ = |
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