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AN833 数据表(PDF) 2 Page - STMicroelectronics |
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AN833 数据表(HTML) 2 Page - STMicroelectronics |
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2 / 3 page ![]() AN833 APPLICATION NOTE 2/3 Connecting pin16 at the rectified mains through a resistor, it is possible to define the modulation depth using the formula: where: Rfm is the programming current resistor. K is a constant value = 0.1157 VIPK is the VRMS is the voltage at pin 7 Typically a good compromise can be 10% to 20% of the starting frequency. Designing the frequency modulation it is useful to remind few points : a) The switching frequency (fsw) is modulated by the mains instantaneous value and decreases as the rectified voltage increases, so the minimum fsw occurs at the input peak voltage and current (see fig. 2). b) The switching losses increase with the frequency (and obviously with the current). c) The current ripple increases (for the same boost inductor value) as the switching frequency decreases, the higher current ripple produces an higher EMI. Figure 2. Modulation Frequency Normalized in a Half Cycle of the Mains Voltage. (eg. RFM = 1100k Ω, Rosc = 24k Ω, Cosc = 820pF). Considering the above mentioned points, to make a reasonable comparison with an equivalent fixed frequency PFC application in terms of EMI, it is recommended to modify the starting frequency (oscillator). The suggested criterion for designing a L4981B application is to follow the same procedure used for the fixed frequency version (L4981A) except for the oscillator that must be designed for the desired frequency (fmin) that occurs at the peak of the current, plus the modulation contribution, that is: ∆f SW f SW -------------- K V IPK R OSC ⋅ V RMS R fm ⋅ -------------------------------- R fm K V IPK m ai ns () ROSc fSw ⋅⋅ V RMS pin7 () ∆fsw ⋅ --------------------------------------------------------------- ⋅ = ⇒ = V RM Sm AIN S 2 ⋅ Vl 0.8 1 0.4 0.2 0 0 45 90 135 Electrical degrees 180 0.8 1 0.4 0.2 0 fsw f SW ∆f sw f min 2.44 R OSC C OSC ⋅ ----------------------------------- = + = |
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