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AN1518 数据表(PDF) 9 Page - STMicroelectronics |
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AN1518 数据表(HTML) 9 Page - STMicroelectronics |
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9 / 30 page ![]() AN1518 Functional description 9/30 However, there is a limit introduced by the recovery time of the recirculation diode. In fact, when the current of the power element is equal to the inductor current, the diode turns OFF and the drain of the power is able to go high. But during its recovery time, the diode can be considered a high value capacitor and this produces a very high peak current, responsible for numerous problems: ● Spikes on the device supply voltage that cause oscillations (and thus noise) due to the board parasitics. ● Turn ON overcurrent leads to a decrease in the efficiency and system reliability. ● Major EMI problems. ● Shorter freewheeling diode life. The fall time of the current during turn OFF is also critical, as it produces voltage spikes (due to the parasitics elements of the board) that increase the voltage drop across the PDMOS. In order to minimize these problems, a new driving circuit topology has been used and the block diagram is shown in Figure 8 . The basic idea is to change the current levels used to turn the power switch ON and OFF, based on the PDMOS and the gate clamp status. This circuitry allows the power switch to be turned OFF and ON quickly and addresses the freewheeling diode recovery time problem. The gate clamp is necessary to ensure that VGS of the internal switch does not go higher than VGSmax. The ON/OFF Control block protects against any cross conduction between the supply line and ground. Figure 8. Driving circuitry 3.7 Inhibit function The inhibit feature is used to put the device in standby mode. With the INH pin higher than 2.2 V the device is disabled and the power consumption is reduced to less than 100 µA. With the INH pin lower than 0.8 V, the device is enabled. If the INH pin is left floating, an internal pull up ensures that the voltage at the pin reaches the inhibit threshold and the device is disabled. The pin is also Vcc compatible. |
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