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AN2115 数据表(PDF) 21 Page - STMicroelectronics |
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AN2115 数据表(HTML) 21 Page - STMicroelectronics |
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21 / 33 page ![]() AN2115 Application information Doc ID 11165 Rev 5 21/33 If the output capacitors are of the tantalum type, the ESR zero is within the system bandwidth and it can be used to stabilize the system so that the zero due to the compensation network will be rendered unnecessary. 6.2 Application losses and efficiency There are many losses affecting the efficiency of the application. Some of these losses are related to the device and others are related to the external components. The most important losses are described below. 6.2.1 Conduction losses These losses are basically due to the significant resistances of the internal switches and the external inductor. Usually the current ripple across the inductor is negligible and so to estimate the conduction losses of the inductor, the average output current can be considered. The conduction losses of the switches depend also on the duty cycle of the application. The RMS current flowing through the high side MOSFET is (Io) 2D, while the RMS current flowing through the low side MOSFET is (Io) 2 (1-D). So, the total conduction losses of the application are: Equation 18 Where RON-HS and RON-LS are the series resistances of the high side and low side MOSFETs respectively, and RL is the series resistance of the inductor. The conduction losses due to the ESR of the input and output capacitors are usually negligible, particularly when using ceramic caps (very low ESR). In any case, when the ESR values for these caps are high, their conduction losses are: Equation 19 Where ΔI is the current ripple flowing through the choke and D the duty cycle of the application. The conduction losses are particularly important at high current cause they depend on its squared value. 6.2.2 Switching losses The switching losses are due to the turning on and off of the internal high side MOSFET. Equation 20 where TON and TOFF are the turn on and turn off times of the internal high side switch. These are approximately in the range of 15 ns to 20 ns.This loss is important at high frequency. P MOS I o 2 R ON HS – D () R ON LS – 1D – () R L + • + • () • = P CIN COUT , I o 2 D1 D – () • () ESR CIN ΔI 2 12 -------- + • • ESR COUT • = P SWITCHING V in I o • F SW • T ON T OFF + () 2 ------------------------------------ • = |
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