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AN2115 数据表(PDF) 21 Page - STMicroelectronics

部件名 AN2115
功能描述  This application note details the main features
PDF  33 Pages
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制造商  STMICROELECTRONICS [STMicroelectronics]
网页  http://www.st.com
标志 STMICROELECTRONICS - STMicroelectronics

AN2115 数据表(HTML) 21 Page - STMicroelectronics

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AN2115
Application information
Doc ID 11165 Rev 5
21/33
If the output capacitors are of the tantalum type, the ESR zero is within the system
bandwidth and it can be used to stabilize the system so that the zero due to the
compensation network will be rendered unnecessary.
6.2
Application losses and efficiency
There are many losses affecting the efficiency of the application. Some of these losses are
related to the device and others are related to the external components. The most important
losses are described below.
6.2.1
Conduction losses
These losses are basically due to the significant resistances of the internal switches and the
external inductor. Usually the current ripple across the inductor is negligible and so to
estimate the conduction losses of the inductor, the average output current can be
considered.
The conduction losses of the switches depend also on the duty cycle of the application.
The RMS current flowing through the high side MOSFET is (Io)
2D, while the RMS current
flowing through the low side MOSFET is (Io)
2 (1-D). So, the total conduction losses of the
application are:
Equation 18
Where RON-HS and RON-LS are the series resistances of the high side and low side
MOSFETs respectively, and RL is the series resistance of the inductor. The conduction
losses due to the ESR of the input and output capacitors are usually negligible, particularly
when using ceramic caps (very low ESR). In any case, when the ESR values for these caps
are high, their conduction losses are:
Equation 19
Where
ΔI is the current ripple flowing through the choke and D the duty cycle of the
application. The conduction losses are particularly important at high current cause they
depend on its squared value.
6.2.2
Switching losses
The switching losses are due to the turning on and off of the internal high side MOSFET.
Equation 20
where TON and TOFF are the turn on and turn off times of the internal high side switch.
These are approximately in the range of 15 ns to 20 ns.This loss is important at high
frequency.
P
MOS
I
o
2
R
ON
HS
D
() R
ON
LS
1D
() R
L
+
+
()
=
P
CIN COUT
,
I
o
2
D1
D
()
() ESR
CIN
ΔI
2
12
--------
+
ESR
COUT
=
P
SWITCHING
V
in
I
o
F
SW
T
ON
T
OFF
+
()
2
------------------------------------
=



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