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AN2798 数据表(PDF) 28 Page - STMicroelectronics

部件名 AN2798
功能描述  Complete DDR2/3 memory power supply
PDF  38 Pages
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制造商  STMICROELECTRONICS [STMicroelectronics]
网页  http://www.st.com
标志 STMICROELECTRONICS - STMicroelectronics

AN2798 数据表(HTML) 28 Page - STMicroelectronics

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PM6670AS evaluation tests
AN2798
28/38
Latched thermal shutdown
If the junction temperature rises up to 150 deg, the thermal protection circuit turns off the
device and discharges the output rails by performing the non-tracking discharge soft-end.
8.9
VDDQ current limit
The valley current limit avoids any high side turning on if the inductor current is higher than
the programmed value. This current limit can be designed with the following equation:
The current sensing is performed by comparing the voltage drop in the low-side MOSFET,
during the TOFF period, with the voltage drop given by an injected current and the current
limit resistor.
Figure 31.
VDDQ, VTT, VTTREF and inductor current, thermal shutdown, pulse-skip mode
DSon
LS
ILIM
CL
R
R
I
,
100µA x
=
DSon
LS
ILIM
CL
R
R
I
,
100µA x
=



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