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AN2928 数据表(PDF) 13 Page - STMicroelectronics |
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AN2928 数据表(HTML) 13 Page - STMicroelectronics |
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13 / 21 page ![]() AN2928 Design equations for the modified buck converter 13/21 Figure 5. Real drain MOSFET current The second part of the MOSFET losses is switching losses, which depend on the (on and off) switching time, drain MOSFET current, drain-source voltage and the switching frequency. The switching time, rise time and fall time is a function of the gate-to-drain “Miller” charge of the MOSFET (Q_GD), the internal resistance of the driver, the threshold voltage (VGS(TH)), and the minimum gate voltage which enables the current through the drain source of the MOSFET. As the correct calculation of switching power losses is complex due to non linear behavior of the switch, it is not possible to obtain an exact equation for the calculation of switching losses. Moreover, the switching behavior is also influenced by the performance of the driver and layout design (leakage inductance and parasitic capacitors). To arrive at an estimation of the switching power losses, Equation 27 can be used. Equation 27 tOFF_SW = switch off-time (s) (typically tens of ns). For example, switched off-time measured on the STEVAL-ILL013V1 using the STP9NM50N power MOSFET (400 V input voltage) is 120 ns. Total power (P_TOT) is lost in the power MOSFET and its heat sink, so it is simple to calculate: Equation 28 TJMAX = maximum junction temperature (°C) TA = ambient temperature (°C) RthJC = junction-to-case thermal resistance (°C/W) RthCH = case-to-heat sink thermal resistance (°C/W) (usually between 0.35 and 0.8 for the insulating washer) RthHA = heat sink-to-ambient thermal resistance (°C/W) AM00371 i IMIN tOFF tON i(t) IMAX IPP t P SW V IN l MAX t OFF SW f ⋅⋅ ⋅ 2 -------------------------------------------------------------------- = P TOT T JM AX T A – R thJC R thCH R thH A ++ ------------------------------------------------------------ = |
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