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DICE SPECIFICATION

RH1011

Linear Technology Corporation

1630 McCarthy Blvd., Milpitas, CA 95035-7417

LT/LT 0603 REV B • PRINTED IN USA

©LINEAR TECHNOLOGY CORPORATION 2000

Rad Hard die require special handling as compared to standard IC

chips.

Rad Hard die are susceptible to surface damage because there is no

silicon nitride passivation as on standard die. Silicon nitride protects

the die surface from scratches by its hard and dense properties. The

passivation on Rad Hard die is silicon dioxide that is much “softer”

than silicon nitride.

LTC recommends that die handling be performed with extreme care so

as to protect the die surface from scratches. If the need arises to move

the die around from the chip tray, use a Teflon-tipped vacuum wand.

This wand can be made by pushing a small diameter Teflon tubing

onto the tip of a steel-tipped wand. The inside diameter of the Teflon

tip should match the die size for efficient pickup. The tip of the Teflon

should be cut square and flat to ensure good vacuum to die surface.

Ensure the Teflon tip remains clean from debris by inspecting under

stereoscope.

During die attach, care must be exercised to ensure no tweezers touch

the top of the die.

Wafer level testing is performed per the indicated specifications for dice. Considerable differences in performance can often be observed for dice versus

packaged units due to the influences of packaging and assembly on certain devices and/or parameters. Please consult factory for more information on

dice performance and lot qualifications via lot sampling test procedures.

Dice data sheet subject to change. Please consult factory for current revision in production.

I.D.No. 66-13-1011

–

SYMBOL

PARAMETER

CONDITIONS

MIN

MAX

UNITS

Input Offset Voltage

(Note 2)

1.5

mV

2.0

mV

Input Offset Current

(Note 3)

4nA

Input Bias Current

(Note 2)

50

nA

(Note 3)

65

nA

Large-Signal Voltage Gain

200

V/mV

50

V/mV

CMRR

Common Mode Rejection Ratio

90

dB

Input Voltage Range

–14.5

13

V

0.5

3

V

Output Saturation Voltage

0.4

V

1.5

V

Output Leakage Current

10

nA

Positive Supply Current

(Note 4)

4mA

Negative Supply Current

(Note 4)

2.5

mA

Strobe Current

Minimum to Ensure Output Transistor Is Off (Notes 4, 5, 6)

500

µA

Note 1: Absolute Maximum Ratings are those values beyond which the

life of a device may be impaired.

Note 3: These specifications apply for all supply voltages from a single

5V to

±15V, the entire input voltage range and for both high and low

defines a worst-case error band that includes effects due to common

mode signals, voltage gain and output load.

Note 5: Do not short the STROBE pad to ground. It should be current

driven at 3mA to 5mA for the shortest strobe time. Currents as low as

500

µA will strobe the RH1011 if speed is not important. External

leakage on the STROBE pin in excess of 0.2

µA when the strobe is “off”

can cause offset voltage shifts.

Note 6: Guaranteed by design, characterization or correlation to other

tested parameters.

Note 7: Please refer to LTC standard product data sheets for all other

applicable information.