DICE/DWF SPECIFICATION

2

RH1185AMK

Linear Technology Corporation

1630 McCarthy Blvd., Milpitas, CA 95035-7417

© LINEAR TECHNOLOGY CORPORATION 2009

LT 1111 REV C • PRINTED IN USA

Wafer level testing is performed per the indicated specifications for dice. Considerable differences in performance can often be observed for dice versus

packaged units due to the influences of packaging and assembly on certain devices and/or parameters. Please consult factory for more information

on dice performance and lot qualifications via lot sampling test procedures.

Dice data sheet subject to change. Please consult factory for current revision in production.

I.D.No. 66-13-1185AMK

unless otherwise noted.

Note 3: Dropout voltage is tested by reducing input voltage until the

output drops 1% below its nominal value. Tests are done at 0.5A and 3A.

The power transistor looks basically like a pure resistance in this range

so that minimum differential at any intermediate current can be calculated

than 0.5A and 3.0A, see the graph in the LT1185 data sheet.

Note 4: Minimum input voltage is limited by base emitter voltage drive of

the power transistor section, not saturation as measured in Note 3. For

output voltages below 4V, minimum input voltage specification may limit

dropout voltage before transistor saturation limit.

Note 5: Supply current is measured on the ground pin, and does not

Note 6: Line regulation is measured on a pulse basis with a pulse

width of ≈2ms to minimize heating. DC regulation will be affected by

thermal regulation and temperature coefficient of the reference. See the

Applications Information section of the LT1185 data sheet for details.

Note 7: External current limit is programmed with a resistor from REF pin