AN3244

Demonstration board description

Doc ID 17742 Rev 1

5/9

D1, C3, and C4 realize a charge pump circuit, which generates the supply voltage for the

high side integrated MOSFETs. Due to voltage and current switching at relatively high

frequency, these components are connected together through short paths in order to

minimize induced noise on other circuitries.

R2 and C5 are used by the overcurrent protection integrated circuitry to set the protection

values in Table 3).

Figure 4, Figure 5, and Figure 6 show the component placement and the two layer layout of

the EVAL6230QR demonstration board. A GND area has been used for the IC power

dissipation.

Table 3.

EVAL6230QR parts list

Part reference

Part value

Part description

C1

220 nF/100 V

Capacitor

C2

100 µF/63 V

Capacitor

C3

10 nF/25 V

Capacitor

C4

220 nF/25 V

Capacitor

C5

5.6 nF

Capacitor

D1

BAT46SW

Diodes

R1 ÷ R8

100 k

Ω 5 % 0.25 W

Resistor

R9, R10, R11

0.47

Ω - 0.5 W

Resistor

R12, R13

470 k

Ω 5 % 0.25 W

Resistor

R14

8.2 k

Ω 5 % 0.25 W

Resistor

U1

L6230Q

Three-phase BLDC motor driver in

VFQFPN5x5