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1998

©

Document No. D15599EJ2V0DS00 (2nd edition)

Date Published April 2002 N CP(K)

Printed in Japan

SILICON POWER TRANSISTOR

2SC4553

NPN SILICON EPITAXIAL TRANSISTOR

FOR HIGH-SPEED SWITCHING

DATA SHEET

2002

The 2SC4553 is a power transistor designed especially for low

collector saturation voltage and features large current switching at a

the driver load.

FEATURES

• On-chip C to E damper diode

• Mold package that does not require an insulating board or

insulation bushing

ABSOLUTE MAXIMUM RATINGS (Ta = 25

°°°°C)

Parameter

Symbol

Ratings

Unit

Collector to base voltage

100

V

Collector to emitter voltage

100

V

Emitter to base voltage

7.0

V

Collector current (DC)

±7.5

A

Collector current (pulse)

±10

A

Base current (DC)

2.0

A

Total power dissipation

°C)

30

W

Total power dissipation

°C)

2.0

W

Junction temperature

150

°C

Storage temperature

−55 to +150

°C

*PW

≤ 10 ms, duty cycle ≤ 50%

PACKAGE DRAWING (UNIT: mm)

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