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AN4345 数据表(PDF) 5 Page - STMicroelectronics |
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AN4345 数据表(HTML) 5 Page - STMicroelectronics |
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5 / 28 page ![]() DocID025078 Rev 1 5/28 AN4345 Circuit description 28 2 Circuit description The converter schematic is given in Figure 4. The input section includes a resistor R1 for inrush current limiting, diodes D1 and D2 and a Pi filter (C1, L1, C2) for rectification and EMC suppression. The FB pin is the inverting input of the internal transconductance error amplifier and its reference voltage is VFB_REF = 3.3 V. The output voltage VOUT1 is regulated by the voltage divider, which is composed of R4 and R5, according to the following formula: Equation 1 where R5 is split into R5A and R5B to allow a better tuning of the output voltage. VOUT2 comes from VOUT1 through a linear voltage regulator, the compensation is performed by the R-C-C network connected between COMP and GND pins. At power-up, the DRAIN pin supplies the internal HV start-up current generator, which charges the C3 capacitor up to VDDON (13 V). At this point, the power MOSFET starts switching, the generator is turned off and the IC is powered by the energy stored in C3. If the jumper J1 is not selected, the VIPer16LD is self-biased: the C3 capacitor voltage, due to the system consumption, falls down and when it reaches VDDCS_ON (10.5 V typ.), the internal HV current generator is turned on, recharging C3 up to VDDON, after that the HV generator is switched off again. The VIPer16LD is internally supplied without any external network, which minimizes the number of external components. Moreover this function allows the designer to generate output voltages below the voltage lockout (5 V for example) with a simple inductor. If the jumper J1 is selected, the HV start-up generator is activated at power on only: when VOUT1 has reached its steady-state value, IC is biased from the output through the diode D6, allowing the system to reach very low standby-consumption values. This is referred to “external biasing” and can be obtained only if VOUT1 is high enough to keep the C3 voltage always above the VDDCS_ON threshold. The shape of the VDD voltage is depicted in Figure 5 and 6 for self-biasing and external biasing respectively. The R6 resistor, if connected, reduces the default current limitation of the device IDLIM by a certain percentage depending on the resistor value, as reported in the curve ILIM vs. RLIM of the datasheet. This optimizes the design of the magnetic and power elements. REF FB OUT V R R V _ 1 4 5 1 ⋅ + = |
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