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AN4354

Gate driving circuitry

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Gate driving circuitry

The L648x devices integrate a programmable gate driving circuitry which allows to drive

a wide range of external N-channel MOSFETs.

The parameters which can be set are listed Table 1.

Figure 1. Gate driving circuit diagram

Table 1. Gate driving circuit parameters

Parameter

Description

Gate source/sink current

The current used to charge/discharge the gate of the

MOSFETs.

Controlled current time (charging

time)

The charging/discharging time of the gate of the MOSFETs.

Turn-off current boost time

The part of the discharging time during which the gate

current is forced to the maximum value.

Deadtime

The time between the turn-off of the MOSFETs and the turn-

on of the opposite one.

Blanking time

The time after the MOSFETs commutation where the

sensing circuitry is disabled in order to avoid spurious

triggering.