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AN317 数据表(PDF) 2 Page - STMicroelectronics |
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AN317 数据表(HTML) 2 Page - STMicroelectronics |
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2 / 3 page ![]() AN317 - APPLICATION NOTE 2/3 It can be noted that Transil diodes withstand very high transient overloads. For example, a diode in a plastic case (DO-201) withstands an “I 2t” of 16000 A 2s, i.e. more than the chip of a 150 A thyristor ! This is due to the particular technology of Transils in which the silicon chip is mounted between two piston- shaped leads with very high thermal capacity. By contrast, the current-handling capability of a Transil in continuous operation is similar to that of a diode in the same package. TRANSILS Case DO-15 DO-201 R6 ICP (A) 3 4.5 5 Table 1: Limits of the continuous RMS current ICP which do not result in the open-circuiting of a TRANSIL diode previously destroyed by an accidental overload. PRACTICAL CONSEQUENCES A. NON-REPETITIVE PULSE OVERLOADS In pulse operation (duration 1 second) the electromechanical capacity of the case is very much higher than that of the silicon chip (figure 1). For example, if we consider the DO-201 case diodes of the “1.5 kW” series, the specifications of the maximum values Vcc and Ipp give an “I 2t” for the silicon chip between 0.01 (high voltage) and 15 A2s (low voltage). For the package, the value of “I 2t” is 16000 A2s, i.e. a THOUSAND TIMES higher. The risk of a TRANSIL diode becoming an open circuit after a pulse overload is thus negligible in practice. The data in figure 1 thus enables the designer to check if his circuit falls within the absolute safety area. B. PROTECTION DIODES AFTER A VOLTAGE SOURCE After an overload exceeding the limit Ipp, the Transil diode whose silicon chip has been destroyed is subjected to a current given by: I V R CP = In many cases this current can result in destruction of the Transil diode contacts, i.e. an open circuit which can have disastrous consequences. To avoid this, it is necessary to add a device K which breaks the circuit after the failure. This device can be a fuse or a circuit-breaker. The data in figure 1 and table 1 will enable the designer to determine the fuse (or circuit-breaker) which will break the circuit before the diode becomes an open circuit. CONCLUSION The specification of the new I 2t and Icc parameters represents notable progress in the characterization of TRANSIL diodes. It enables the designer to define his protection with absolute safety, a vital precaution since the overloads encountered in practice do not always correspond with the standards. The building of absolutely safe equipment enables the damage due to unforeseeable accidents to be limited, which is con- sidered important by STMicroelectronics with our years of experience in the field of protection. |
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