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AN317 数据表(PDF) 2 Page - STMicroelectronics

部件名 AN317
功能描述  PROTECTION BY TRANSIL HOW TO ENSURE ABSOLUTE SAFETY
PDF  3 Pages
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制造商  STMICROELECTRONICS [STMicroelectronics]
网页  http://www.st.com
标志 STMICROELECTRONICS - STMicroelectronics

AN317 数据表(HTML) 2 Page - STMicroelectronics

  AN317 Datasheet HTML 1Page - STMicroelectronics AN317 Datasheet HTML 2Page - STMicroelectronics AN317 Datasheet HTML 3Page - STMicroelectronics  
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AN317 - APPLICATION NOTE
2/3
It can be noted that Transil diodes withstand very
high transient overloads. For example, a diode in a
plastic case (DO-201) withstands an “I
2t” of 16000
A
2s, i.e. more than the chip of a 150 A thyristor !
This is due to the particular technology of Transils
in which the silicon chip is mounted between two
piston- shaped leads with very high thermal
capacity.
By
contrast,
the
current-handling
capability of a Transil in continuous operation is
similar to that of a diode in the same package.
TRANSILS
Case
DO-15
DO-201
R6
ICP (A)
3
4.5
5
Table 1: Limits of the continuous RMS current ICP
which do not result in the open-circuiting of a
TRANSIL diode previously destroyed by an
accidental overload.
PRACTICAL CONSEQUENCES
A. NON-REPETITIVE PULSE OVERLOADS
In pulse operation (duration 1 second) the electromechanical capacity of the case is very much higher than
that of the silicon chip (figure 1).
For example, if we consider the DO-201 case diodes of the “1.5 kW” series, the specifications of the
maximum values Vcc and Ipp give an “I
2t” for the silicon chip between 0.01 (high voltage) and 15 A2s (low
voltage). For the package, the value of “I
2t” is 16000 A2s, i.e. a THOUSAND TIMES higher.
The risk of a TRANSIL diode becoming an open circuit after a pulse overload is thus negligible in practice.
The data in figure 1 thus enables the designer to check if his circuit falls within the absolute safety area.
B. PROTECTION DIODES AFTER A VOLTAGE
SOURCE
After an overload exceeding the limit Ipp, the
Transil diode whose silicon chip has been
destroyed is subjected to a current given by:
I
V
R
CP
=
In many cases this current can result in destruction
of the Transil diode contacts, i.e. an open circuit
which can have disastrous consequences.
To avoid this, it is necessary to add a device K
which breaks the circuit after the failure. This
device can be a fuse or a circuit-breaker. The data
in figure 1 and table 1 will enable the designer to
determine the fuse (or circuit-breaker) which will
break the circuit before the diode becomes an
open circuit.
CONCLUSION
The specification of the new I
2t and Icc parameters represents notable progress in the characterization of
TRANSIL diodes. It enables the designer to define his protection with absolute safety, a vital precaution
since the overloads encountered in practice do not always correspond with the standards. The building of
absolutely safe equipment enables the damage due to unforeseeable accidents to be limited, which is con-
sidered important by STMicroelectronics with our years of experience in the field of protection.



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