AN2386 datasheet(21/30 Pages) STMICROELECTRONICS

部件名	AN2386

功能描述	How to achieve the threshold voltage thermal coefficient

PDF	30 Pages

Scroll/Zoom	100%

制造商	STMICROELECTRONICS [STMicroelectronics]

网页	http://www.st.com

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21 / 30 page

AN2386

Some considerations on VTH and TVTC equations and real examples

21/30

Figure 16.

DEVICE1 TVTC simulated data - comparison between different tox

When the oxide thickness increases from 470Å to 500Å, the threshold voltage increases its

value and also TVTC increases in absolute value and vice versa, decreases the thickness

oxide from 470Å to 350Å. Now, it is possible simulate VTH and TVTC supposing that the

temperature is fixed to 300K and the gate doping concentration changes in the range of

1e+18-1.5e+20cm-3 (see Figure 17. and Figure 18.).

Figure 17.

DEVICE1 VTH simulated data - fixing T and acting on Ng

Figure 18.

DEVICE1 TVTC simulated data - fixing T and acting on Ng

The graph in Figure 19. and Figure 20. show VTH and TVTC trend fixing the temperature to

300K and changing Na in the range of 1e+16-6.1e+17cm

-3.

AN2386 数据表(PDF) 21 Page - STMicroelectronics