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AN4213 数据表(PDF) 31 Page - STMicroelectronics |
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AN4213 数据表(HTML) 31 Page - STMicroelectronics |
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31 / 42 page ![]() DocID023984 Rev 2 31/42 AN4213 Driving optimization Here below is the summary table, in terms of dissipated energy during both turn-on and turn-off detail. As Table 2 shows, the best compromise in terms of switching losses, is to have a smaller snubber capacitor, C sn = 47 pF, in order to reduce the peak on the drain current during turn- on (as shown in Figure 21) and R g = 220 Ω with speed off diode in order to speed up the device turn-off (as shown in Figure 19.). In fact a greater R g provides a slower switch-on of the Power MOSFET, reduces the snubber capacitor discharge, guaranteeing negligible power losses during turn-on. Table 2. Summary table of dissipation energy Driving conditions Eon (µJ) Eoff (µJ) Etot (µJ) R g =220 Ω, speed off diode, C sn = 47 pF 1.27 6.39 7.66 R g =220 Ω, speed off diode, C sn = 100 pF 2.05 6.22 8.72 R g =220 Ω, no speed off diode, C sn = 47 pF 1.25 12.46 13.71 R g =220 Ω, no speed off diode, C sn = 100 pF 1.66 10.56 12.22 |
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