DocID025511 Rev 1

5/10

TN1156

Experiments, results and discussion

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Experiments, results and discussion

To evaluate the electro-thermal instability of irradiated HV Power MOSFETs working in

linear zone and to compare their performance with standard devices, two different samples

belonging to two different suppliers have been taken into account. Devices under testing

have a breakdown voltage equal to 600 V, a standard threshold voltage with 50 A of nominal

drain current in continuous mode when the ambient temperature is 25 °C. The only

difference between irradiated and not irradiated devices is the irradiation process. To study

the thermal behavior in linear zone of the devices under testing, thermal coefficients have

been measured: 10 V Vds. TC has been achieved against the drain current fixing the Vds

values to 10 V and considering two ambient temperature values: 25 °C and 75 °C. Testing

has been fulfilled considering the worst conditions where the current isn't fixed by external

equipment or controlled by a feedback, but it depends on the same transistor (open loop

case) only. The graph in

Figure 2 and Figure 3 takes into account TC versus I

D

for Vds = 10

V.

Figure 2. Comparison between standard and irradiated HV Power MOSFETs: TC

GIPG141120131455FSR