LTC1981/LTC1982

3

1.5

5.5

1982 G01

2.5

3.5

4.5

5.0

2.0

3.0

4.0

8.0

7.5

7.0

6.5

6.0

5.5

5.0

4.5

4.0

3.5

3.0

2.5

2.0

1.5

1.0

0.5

0

GATE DRIVE VOLTAGE

SUPPLY VOLTAGE (V)

1.0

0

5

15

20

25

2.0

3.0 3.5

5.5

1982 G02

10

1.5

2.5

4.0 4.5 5.0

LTC1981 OR

BOTH CHANNELS ON

LTC1982

EITHER CHANNEL ON

LTC1982

GATE DRIVE VOLTAGE (V)

0

100

10

1

0.1

34

6

7

12

5

8

1982 G03

SHDN LOGIC INPUT VOLTAGE (V)

01

60

50

40

30

20

10

0

1981/82 G04

2

SHDN1 TIED

TO SHDN2

SHDN LOGIC INPUT VOLTAGE (V)

01

300

250

200

150

100

50

0

1981/82 G05

2

SHDN1 TIED

TO SHDN2

SYMBOL

PARAMETER

CONDITIONS

MIN

TYP

MAX

UNITS

GDR Output Voltage Low

q

0.05

0.4

V

GATE Drive Ready Trip Point

GATE Voltage Rising

q

3.85

4.05

4.25

V

q

5.78

6.08

6.38

V

q

6.17

6.5

6.82

V

q

6.17

6.5

6.82

V

GDR Hysteresis

GATE Voltage Falling

2

%

GDR Delay

After GATE is Above the GDR Trip Threshold

2

µs

Note 1: Absolute Maximum Ratings are those values beyond which the life

of a device may be impaired.

Note 2: All voltage values are with respect to GND.

Note 3: the LTC1982E is guaranteed to meet performance specifications

from 0

°C to 70°C. Specifications over the –40°C to 85°C operating

temperature range are assured by design, characterization and correlation

with statistical process controls.

Note 4: Guaranteed by design not subject to test.

(LTC1981 only)

TYPICAL PERFOR A CE CHARACTERISTICS

Supply Current vs Supply Voltage

GATE Drive Voltage vs Supply

Voltage

GATE Drive Current (LTC1982)