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DRD4460V16 数据表(PDF) 3 Page - Dynex Semiconductor |
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DRD4460V16 数据表(HTML) 3 Page - Dynex Semiconductor |
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3 / 6 page ![]() - 3 - DRD4460V22 3/6 www.dynexsemi.com THERMAL AND MECHANICAL RATINGS Symbol Parameter Test Conditions Min. Max. Units Rth(j-c) Thermal resistance – junction to case Double side cooled DC - 0.01 °C/W Rth(c-h) Thermal resistance – case to heatsink Double side cooled DC - 0.003 °C/W Tvj Virtual junction temperature Blocking VDRM / VRRM -40 175 °C Tstg Storage temperature range -40 175 °C Fm Clamping force 50 62 kN CHARACTERISTICS Symbol Parameter Test Conditions Min. Max. Units VFM Forward voltage At 3000A peak, Tcase = 25°C - 1.15 V IRM Peak reverse current At VDRM, Tcase = 175°C - 250 mA QS Total stored charge IF = 4000A, dIRR/dt =10A/µs - 5000 µC Tcase = 175°C, VR =100V VTO Threshold voltage At Tvj = 175°C - 0.81 V rT Slope resistance At Tvj = 175°C - 0.059 m |
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