13

µPD6P4B

Data Sheet U13594EJ2V0DS00

3.2 Program Memory Writing Procedure

The program memory is written at high speed in the following procedure.

(1)

Pull down the pins not used to GND via resistor. Keep the CLK pin low.

(2)

(3)

µs.

(4)

(5)

Set the program memory address 0 clear mode by using the mode setting pins.

(6)

(7)

Set the program inhibit mode.

(8)

Write data to the program memory in the 1-ms write mode.

(9)

Set the program inhibit mode.

(10) Set the verify mode. If the data have been written to the program memory, proceed to (11). If not, repeat

steps (8) through (10).

(11) Additional writing of (number of times of writing in (8) through (10): X)

× 1 ms.

(12) Set the program inhibit mode.

(13) Input a pulse to the CLK pin four times to update the program memory address (+1).

(14) Repeat steps (8) through (13) up to the last address.

(15) Set the 0 clear mode of the program memory address.

(17) Turn off power.

The following figure illustrates steps (2) through (13) above.

Repeated X time

Reset

Oscillation stabilization

wait time

Write

Verify

Additional write

Address

increment

Data input

Hi-Z

Hi-Z

Hi-Z

Data output

Data input

Hi-Z

GND

GND

CLK