PM0054

Memory organization

Doc ID 15433 Rev 9

7/28

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Memory organization

This section describes the memory organization corresponding to:

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low density STM8L101x

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low density STM8L051F3, STM8L151C3/K3/K2/G3/G2/F3/F2

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medium density STM8L052C6, STM8L151C6/C4/K6/K4/G6/G4, and

STM8L152C6/C4/K6/K4

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medium density STM8AL31xx/STM8AL3Lxx

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medium+ density STM8L151R6 and STM8L152R6

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high density STM8L052R8, STM8L151x8, STM8L152x8, STM8L162x8

Low density STM8L101x microcontrollers feature up to 8 Kbytes of Flash program memory

including up to 2 Kbytes of data EEPROM.

Low density STM8L05/15x microcontrollers feature from 4 to 8 Kbytes of Flash memory,

plus 256 bytes of data EEPROM.

Medium density STM8L05x microcontrollers feature from16 to 32 Kbytes of Flash memory,

plus 256 bytes of data EEPROM.

Medium density STM8AL31xx/STM8AL3Lxx microcontrollers feature from16 to 32 Kbytes of

Flash memory, plus 1 Kbyte of data EEPROM

Medium and medium+ density STM8L15x microcontrollers feature from16 to 32 Kbytes of

Flash memory, plus 1 Kbyte of data EEPROM.

High density STM8L05x microcontrollers feature 64 Kbytes of Flash memory plus 256 bytes

of data EEPROM.

High density STM8L15x/16x microcontrollers feature 64 Kbytes of Flash memory and

2 Kbytes of data EEPROM.

The memory organization differs from one STM8 family to another. Refer to Section 3.1,

Section 3.2 and Section 3.5,for a description of the memory organization according to

microcontroller family and memory density.

A memory accelerator takes advantage of parallel 4-byte storage (corresponds to a word).

The Flash program memory and data EEPROM can be erased and programmed at byte

level, word level or block level:

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In word programming, 4 bytes are programmed/erased during the same cycle.

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In block programming, a whole block is programmed/erased during the same cycle.

Refer to Section 3.1, Section 3.2 and Section 3.5, for information on block size according to

the devices.