TIP112 datasheet(1/2 Pages) KEC

部件名	TIP112

功能描述	EPITAXIAL PLANAR NPN TRANSISTOR (MONOLITHIC CONSTRUCTION WITH BUILT IN BASE-EMITTER SHUNT RESISTORS INDUSTRIAL USE.)

PDF	2 Pages

Scroll/Zoom	100%

制造商	KEC [KEC(Korea Electronics)]

网页	http://www.keccorp.com

标志

1 / 2 page

1999. 11. 16

1/2

SEMICONDUCTOR

TECHNICAL DATA

TIP112

EPITAXIAL PLANAR NPN TRANSISTOR

Revision No : 1

MONOLITHIC CONSTRUCTION WITH BUILT IN

BASE-EMITTER SHUNT RESISTORS INDUSTRIAL USE.

FEATURES

High DC Current Gain.

: hFE=1000(Min.),

VCE=4V, IC=1A.

Low Collector-Emitter Saturation Voltage.

Complementary to TIP117.

MAXIMUM RATING (Ta=25 )

DIM MILLIMETERS

1. BASE

2. COLLECTOR (HEAT SINK)

3. EMITTER

TO-220AB

10.30 MAX

15.30 MAX

0.80

Φ3.60 0.20

3.00

6.70 MAX

13.60 0.50

5.60 MAX

0.50

1.50 MAX

2.54

4.70 MAX

2.60

A

B

C

D

E

F

G

H

J

K

L

M

N

O

P

A

MM

123

L

C

K

J

P

D

1.37 MAX

1.50 MAX

R

S

C

T

Q1.50

R

9.50 0.20

S

8.00 0.20

T

2.90 MAX

+_

ELECTRICAL CHARACTERISTICS (Ta=25 )

CHARACTERISTIC

SYMBOL

RATING

UNIT

Collector-Base Voltage

VCBO

100

V

Collector-Emitter Voltage

VCEO

100

V

Emitter-Base Voltage

VEBO

5

V

Collector Current

DC

IC

2

A

Pulse

ICP

4

Base Current

DC

IB

50

mA

Collector Power

Dissipation

Ta=25

PC

2

W

Tc=25

50

Junction Temperature

Tj

150

Storage Temperature Range

Tstg

-65 150

CHARACTERISTIC

SYMBOL

TEST CONDITION

MIN.

TYP.

MAX.

UNIT

Collector Cut-off Current

ICEO

VCE=50V, IB=0

-

2

mA

ICBO

VCB=100V, IE=0

-

1

Emitter Cut-off Current

IEBO

VEB=5V, IC=0

-

2

mA

DC Current Gain

hFE

VCE=4V, IC=1A

1000

-

VCE=4V, IC=2A

500

-

Collector-Emitter Sustaining Voltage

VCEO(SUS)

IC=30mA, IB=0

100

-

V

Collector-Emitter Saturation Voltage

VCE(sat)

IC=2A, IB=8mA

-

2.5

V

Base-Emitter On Voltage

VBE(ON)

VCE=4V, IC=2A

-

2.8

V

Collector Output Capacitance

Cob

VCB=10V, IE=0, f=0.1MHz

-

100

pF

C

B

E

R

10k

Ω

0.6k

Ω

R

1

2

=

EQUIVALENT CIRCUIT

类似零件编号 - TIP112

制造商	部件名	数据表	功能描述
Mospec Semiconductor	TIP112	146Kb / 3P	POWER TRANSISTORS(2.0A,60-100V,50W)
Motorola, Inc	TIP112	269Kb / 6P	DARLINGTON 2 AMPERE COMPLEMENTARY SILICON POWER TRANSISTORS
ON Semiconductor	TIP112	269Kb / 6P	Plastic Medium-Power Complementary Silicon Transistors REV 1
Power Innovations Ltd	TIP112	101Kb / 6P	NPN SILICON POWER DARLINGTONS
STMicroelectronics	TIP112	72Kb / 6P	COMPLEMENTARY SILICON POWER DARLINGTON TRANSISTORS Jun-1999

More results

类似说明 - TIP112

制造商	部件名	数据表	功能描述
Fairchild Semiconductor	TIP105	50Kb / 4P	Monolithic Construction With Built In Base- Emitter Shunt Resistors
KEC(Korea Electronics)	MJD112	394Kb / 2P	EPITAXIAL PLANAR NPN TRANSISTOR (MONOLITHIC CONSTRUCTION WITH BUILT IN BASE-EMITTER SHUNT RESISTORS INDUSTRIAL USE.)
	MJD117	394Kb / 2P	EPITAXIAL PLANAR PNP TRANSISTOR (MONOLITHIC CONSTRUCTION WITH BUILT IN BASE-EMITTER SHUNT RESISTORS INDUSTRIAL USE.)
	TIP112F	41Kb / 2P	EPITAXIAL PLANAR NPN TRANSISTOR (MONOLITHIC CONSTRUCTION WITH BUILT IN BASE-EMITTER SHUNT RESISTORS INDUSTRIAL USE.)
	TIP117	75Kb / 2P	EPITAXIAL PLANAR PNP TRANSISTOR (MONOLITHIC CONSTRUCTION WITH BUILT IN BASE-EMITTER SHUNT RESISTORS INDUSTRIAL USE.)
	TIP117F	42Kb / 2P	EPITAXIAL PLANAR PNP TRANSISTOR (MONOLITHIC CONSTRUCTION WITH BUILT IN BASE-EMITTER SHUNT RESISTORS INDUSTRIAL USE.)
SemiHow Co.,Ltd.	TIP100	744Kb / 5P	Monolithic Construction With Built In Base-Emitter Shunt Resistors
	TIP125	510Kb / 5P	Monolithic Construction With Built In Base-Emitter Shunt Resistors
	TIP106	750Kb / 5P	Monolithic Construction With Built In Base-Emitter Shunt Resistors
TAI-SAW TECHNOLOGY CO.,...	TIP140T	574Kb / 5P	Monolithic Construction With Built In Base-Emitter Shunt Resistors