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BCP51_52_53 数据表(PDF) 2 Page - Diodes Incorporated

部件名 BCP51_52_53
功能描述  PNP MEDIUM POWER TRANSISTORS IN SOT223
PDF  7 Pages
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制造商  DIODES [Diodes Incorporated]
网页  http://www.diodes.com
标志 DIODES - Diodes Incorporated

BCP51_52_53 数据表(HTML) 2 Page - Diodes Incorporated

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BCP 51 / 52 / 53
Datasheet Number: DS35366 Rev. 6 - 2
2 of 7
www.diodes.com
March 2015
© Diodes Incorporated
BCP 51/ 52/ 53
Absolute Maximum Ratings (@TA = +25°C, unless otherwise specified.)
Characteristic
Symbol
BCP51
BCP52
BCP53
Unit
Collector-Base Voltage
VCBO
-45
-60
-100
V
Collector-Emitter Voltage
VCEO
-45
-60
-80
V
Emitter-Base Voltage
VEBO
-5
V
Continuous Collector Current
IC
-1
A
Peak Pulse Collector Current
ICM
-2
Continuous Base Current
IB
-100
mA
Peak Pulse Base Current
IBM
-200
Thermal Characteristics (@TA = +25°C, unless otherwise specified.)
Characteristic
Symbol
Value
Unit
Power Dissipation
(Note 6)
PD
2
W
Thermal Resistance, Junction to Ambient
(Note 6)
RθJA
62
°C/W
Thermal Resistance, Junction to Leads
(Note 7)
RθJL
19.4
°C/W
Operating and Storage Temperature Range
TJ, TSTG
-65 to +150
°C
ESD Ratings (Note 8)
Characteristic
Symbol
Value
Unit
JEDEC Class
Electrostatic Discharge - Human Body Model
ESD HBM
4,000
V
3A
Electrostatic Discharge - Machine Model
ESD MM
400
V
C
Notes:
6. For a device mounted with the collector lead on 50mm x 50mm 1oz copper that is on a single-sided 1.6mm FR4 PCB; device is measured under still air
conditions whilst operating in steady-state.
7. Thermal resistance from junction to solder-point (at the end of the collector lead).
8. Refer to JEDEC specification JESD22-A114 and JESD22-A115.



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