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BAS85 数据表(PDF) 1 Page - Taiwan Semiconductor Company, Ltd |
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BAS85 数据表(HTML) 1 Page - Taiwan Semiconductor Company, Ltd |
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1 / 3 page ![]() Small Signal Product CREAT BY ART - Low forward voltage drop - Ideal for automated placement - Hermetically sealed glass - Compression bonded construction - All external surfaces are corrosion resistant and leads are readily solderable - Solder hot dip tin (Sn) lead finish - Polarity: Indicated by black cathode band SYMBOL UNIT PD mW VRRM V VR V IF(AV) mA IFSM A TJ oC TSTG oC SYMBOL UNIT Breakdown Voltage BV V Reverse Leakage Current IR μA Forward Voltage Reverse Recovery Time trr ns Junction Capacitance CJ pF Document Number: DS_S1412007 Version: C14 Storage Temperature Range PARAMETER VALUE BAS85 Taiwan Semiconductor Hermetically Sealed Glass Fast Switching Schottky Barrier Diodes FEATURES MINI MELF 4 125 Power Dissipation Repetitive Peak Reverse Voltage Maximum DC Blocking Voltage 200 Peak Forward Surge Current Operating Junction Temperature MIN TYP MAX MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS (TA=25℃ unless otherwise noted) -65 to +125 30 30 200 30 2 0.24 V 0.32 0.40 0.50 IF=30mA IF=100mA (Note 1) 10 Note 1: Reverse recovery test conditions : IF=IR=10mA, RL=100Ω, IRR=1mA 0.80 5 MECHANICAL DATA VR=1V, f=1.0MHz VF PARAMETER IR=10μA VR=25V IF=0.1mA IF=1.0mA IF=10mA Average Forward Rectified Current |
类似零件编号 - BAS85 |
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类似说明 - BAS85 |
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